基于宽禁带半导体材料氮化镓的原子力显微镜分析
Atomic force microscopy analysis of gallium nitride based on wide-band gap semiconductor material
王亚伟1
作者信息
- 1. 中国电子科技集团公司第十三研究所,河北 石家庄 050051
- 折叠
摘要
微波功率器件在无线通信技术领域扮演着重要角色,而宽禁带半导体材料对微波功率器件的研究起着关键作用.氮化镓作为宽禁带半导体的代表,具有介电常数小、载流子饱和速率高、热导率高等优良特性.文章通过对氮化镓外延材料进行深入的原子力显微镜(Atomic Force Microscope,AFM)分析,能够更精准地表征氮化镓外延材料,从而助力微波功率器件的发展.
Abstract
Microwave power devices play an important role in the field of wireless communication technology,and wide band gap semiconductor materials play a key role in the research of microwave power devices.As a representative of wide band-gap semiconductors,gallium nitride has the advantages of low dielectric constant,high carrier saturation rate and high thermal conductivity.In this paper,through in-depth atomic force microscope(AFM)analysis of gallium nitride epitaxial materials,gallium nitride epitaxial materials can be characterized more accurately,so as to promote the development of microwave power devices.
关键词
氮化镓/原子力显微镜/表面形貌Key words
gallium nitride/atomic force microscopy/surface morphology引用本文复制引用
基金项目
国家重点研发计划(2022YFB3404304)
出版年
2024
NETL
NSTL
万方数据