微波功率器件在无线通信技术领域扮演着重要角色,而宽禁带半导体材料对微波功率器件的研究起着关键作用.氮化镓作为宽禁带半导体的代表,具有介电常数小、载流子饱和速率高、热导率高等优良特性.文章通过对氮化镓外延材料进行深入的原子力显微镜(Atomic Force Microscope,AFM)分析,能够更精准地表征氮化镓外延材料,从而助力微波功率器件的发展.
Atomic force microscopy analysis of gallium nitride based on wide-band gap semiconductor material
Microwave power devices play an important role in the field of wireless communication technology,and wide band gap semiconductor materials play a key role in the research of microwave power devices.As a representative of wide band-gap semiconductors,gallium nitride has the advantages of low dielectric constant,high carrier saturation rate and high thermal conductivity.In this paper,through in-depth atomic force microscope(AFM)analysis of gallium nitride epitaxial materials,gallium nitride epitaxial materials can be characterized more accurately,so as to promote the development of microwave power devices.
gallium nitrideatomic force microscopysurface morphology
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