Preparation and Properties of Photodetectors based on CVD MoSe2 Film
Two-dimensional transition metal-sulfur compoundsTMDs)characterized by tunable bandgap,high photoelectric conversion efficiency,strong light absorption,and fast carrier transport rate have become a focus in the study of the preparation of photosensitive layers.MoSe2 thin film materials were prepared by the chemical vapour deposition and photodetectors were prepared by the method of dry transfer.The results show that the MoSe2 photodetector can respond in the wavelength range of 250～850 nm,with the photoresponsivity up to 9.53 mW·cm-2,the specific detectivity up to 3.35 ×1010 cm·Hz1/2·W-1,the external quantum efficiency up to 3.08 × 10-11％,the rise time and the fall time shorter than 44 ms and 39 ms,respectively.The minimum detectable light intensity is 0.01 mW·cm-2.MoSe2 materials,due to their adjustable bandgap,flexibility and light weight,has become an ideal option for high-performance photodetectors with broad spectral response.
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