首页|衬底温度对TiCuN薄膜红外发射性能的影响

衬底温度对TiCuN薄膜红外发射性能的影响

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为研究TiCuN薄膜的性能尤其是红外发射性能,采用反应磁控共溅射技术在玻璃衬底上沉积制备了 TiCuN薄膜,研究了不同的衬底温度(25、200、300、400 ℃)对TiCuN薄膜的相组成、微观形貌、表面润湿性、电阻率以及红外发射率的影响.结果表明,衬底温度为25 ℃时,制备的薄膜由TiCuN相组成;当衬底温度大于200 ℃时,Cu从TiCuN相中析出,制备的薄膜由TiCuN相和金属Cu纳米颗粒两相组成.制备的TiCuN薄膜的水接触角均大于100°,具有良好的疏水性.衬底温度为25 ℃时沉积的TiCuN薄膜表面覆盖着大量纳米气孔以及点状突起的细小纳米颗粒,薄膜表面凹凸不平.随着衬底温度的升高,纳米颗粒长大,纳米气孔减少甚至消失,薄膜表面变得致密平整.由于相组成、微观结构等改变,随着衬底温度的升高,TiCuN薄膜的电阻率和红外发射率大幅下降.提高衬底温度可有效降低TiCuN薄膜的电阻率和红外发射率.红外发射率的变化趋势与电阻率的变化趋势相一致.
Effect of substrate temperature on the infrared emission performance of TiCuN films
In order to study the properties of TiCuN films,especially the infrared emission prop-erties,TiCuN films were deposited using reactive magnetron co-sputtering on glass substrates,and the effects of different substrate temperatures(25,200,300,400 ℃)on the phase composi-tion,microstructure,surface wettability resistivity and infrared emissivity of TiCuN films were investigated.The results show that the prepared film is formed as TiCuN ternary solid solution when the substrate temperature was 25 ℃.When the substrate temperature is higher than 200 ℃,Cu separates from the TiCuN phase and the prepared films consist of two components:TiCuN phase and metallic Cu nanoparticles.The water contact angles of the prepared TiCuN films are all greater than 100°,showing the good hydrophobicity.The surface of TiCuN film de-posited at aubstrate temperature of 25 ℃ is covered with a large number of nano-pores and tiny punctate nanoparticles,and thus the surface is uneven.With the increase in substrate tempera-ture,the nanoparticles grow,the nano-pores decreases or even disappeare,and thus the surface of the film became compact and flat.Due to the change in the phase composition and microstruc-ture,the resistivity and infrared emissivity of TiCuN films decreased significantly with increasing substrate temperature.The resistivity and infrared emissivity of TiCuN films could be reduced effectively by increasing the substrate temperature.The trend of infrared emissivity is consistent with that of resistivity.

TiCuN filmsreactive magnetron co-sputteringsubstrate temperatureresistivityinfrared emissivity

徐洁、陈鲸朴、吴奇帅、卢琳琳、王铎

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西安工程大学材料工程学院,陕西西安 710048

TiCuN薄膜 磁控共溅射 衬底温度 电阻率 红外发射率

2024

西安工程大学学报
西安工程大学

西安工程大学学报

CSTPCD
影响因子:0.473
ISSN:1674-649X
年,卷(期):2024.38(4)