In order to reduce the influence of temperature drift on amplifiers,a broadband RF driver amplifier(DA)with integrated temperature compensated DC bias network is designed by means of the theoretical analysis.In order to improve the gain and output power,the two-stage differential common emitter common base(cascode)structure is adopted,and a novel differential conversion single-ended Marchand balun is integrated into the output port.The circuit is designed based on the 0.18 μm Silicon Germanium(SiGe)BiCMOS high-performance heterojunction bipolar transistor(HBT)process.The electromagnetic simulation results show that in the frequency band range of 8～16 GHz,the gain of the amplifier is greater than 26 dB,the output 1 dB power single compression point is≥10 dBm,the saturation output power is≥13 dBm,the port return loss is≤-l0 dB,and the gain of the same frequency point within the range of-40℃to 125℃is≤1.5 dB.The performance of the designed DA is stable,and the working current of the 2.8 V power supply is 45 mA,and the circuit area is only 0.50 mm×0.58 mm,which can realize the design requirements of high performance and miniaturization of SiGe amplifier.
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