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功率循环下GaN器件栅极可靠性研究

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氮化镓(GaN)功率器件长期在高功率密度工况下运行,其栅极可靠性一直是关注的重点,栅极的退化会造成器件误导通以及导通损耗增加等问题.为此,设计一个直流功率循环装置,通过功率循环的方式加速器件老化.同时为了评估栅极可靠性,采用与栅极紧密相关的阈值电压(VTH)以及栅极电容(CGS)作为特征参量,设计VTH与CGS监测电路.通过实验研究了器件栅极的温度特性、恢复特性以及在100 000次功率循环后的退化情况.结果表明,随着温度的增加,VTH正向漂移,漂移量超过10%,CGS则与温度解耦保持不变.器件在功率循环后VTH存在恢复现象,前10 min恢复超过70%,在3 h后保持稳定,CGS不存在恢复特性.所选两款GaN在100 000次功率循环后特征参量发生不同程度的变化,表明器件栅极在功率循环后发生了一定程度的退化.因此,有必要在设计器件及应用时考虑温度及热应力冲击所造成的栅极性能退化,优化设计工艺以提高GaN器件的可靠性.
Research on GaN device gate reliability under power cycling
Gallium nitride(GaN)power devices have been operating under high power density conditions for a long time,and the reliability of their gates has always been the focus of attention,and the degradation of the gates can cause problems such as device mis-conduction and increased conduction loss.A DC power cycling device is designed to accelerate the device aging by means of power cycling.In order to evaluate the reliability of the gate,the threshold voltage(VTH)and the gate capacitance(CGS)are used as the characteristic parameters to design the VTH and CGS monitoring circuits.The temperature characteristics,recovery characteristics,and the degradation of the gate after 100 000 power cycles are investigated experimentally.The results indicate that,as the temperature increases,VTH can drift forward,with a drift amount exceeding 10%,while CGS can remain decoupled from temperature and remains unchanged.After the power cycle,the VTH of the device can recover more than 70%in the first 10 min,and can remain stable after 3 h.CGS do not have recovery characteristics.The characteristic parameters of the two selected GaNs can change in different degrees after 100 000 power cycles,which indicates that the gate can degenerate to some extent after the power cycle.Therefore,it is necessary to consider the degradation of gate performance caused by temperature and thermal stress impacts when designing devices and applications,and optimize the design process to improve the reliability of GaN devices.

GaN devicegate reliabilitypower cyclingthreshold voltagegate capacitanceaccelerated aging

郭世龙、薛炳君、严焱津、汪文涛

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三峡大学 电气与新能源学院,湖北 宜昌 443000

GaN器件 栅极可靠性 功率循环 阈值电压 栅极电容 加速老化

2025

现代电子技术
陕西电子杂志社

现代电子技术

北大核心
影响因子:0.417
ISSN:1004-373X
年,卷(期):2025.48(2)