The huge dielectric constant of In-Nb co-doped TiO2(INTO)ceramics below 100 kHz is due to the capacitance effect of the internal barrier layer.Based on this capacitance effect,the low-frequency dielectric loss of grain boundaries can be reduced by increasing their contribution to dielectric properties.Therefore,La is doped into INTO ceramics to refine grains and increase the number of grain boundaries,which will reduce energy consumption during the ceramic preparation process.It is shown that La doping reduces the grain size of INTO ceramics,increases the number of grain boundaries in the ceramics,and precipitates LaNbTiO6 secondary phase in the ceramics,which forming high resistance phase boundaries between ceramic grains,reducing the low-frequency dielectric loss of the ceramics,and optimizing the frequency stability of the dielectric constant of the ceramics.
co-doped TiO2 ceramicsinternal barrier layer capacitance effectlow frequency dielectric lossnumber of grain boundariesphase boundary
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