The development results of high power RF Si vertical diffusion metal-oxide-semiconductor(Si-VDMOS)transistors are in-troduced,using split gate technology to reduce feedback capacitance and multi-cell technology to reduce source inductance.From the chip principle,the influence of two chips structure design on feedback capacitance and the influence of two layout leads on source inductance are compared and analyzed.A series of high-power RF Si-VDMOS power transistors with a power rating of over 100 W have been developed.The main performances of the product are as follows:under working voltage of 28 V and continuous wave,when using 8 chips,the output power can reach over 200 W at 225 MHz,and the output power can reach over 150 W at 500 MHz;fur-ther increasing the number of chips,when using 12 chips,the output power can reach over 300 W at 225 MHz,while possessing high power gain and high efficiency.Compared with the parameters of foreign products,these high power RF Si-VDMOS transistors have reached the same level of similar products.
关键词
大功率/硅-垂直双扩散金属氧化物场效应晶体管/射频功率晶体管/反馈电容/源极电感
Key words
high power/Si vertical diffusion metal-oxide-semiconductor(Si-VDMOS)/RF power transistor/feedback capaci-tance/source inductance
维普
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