Anomalous Nernst effect(ANE)is an effect of thermoelectric conversion using magnetic materials.The Fe thin films were deposited and grew on Si substrate by magnetron sputtering method to investigate the influence of film thickness and geometric size on ANE.The results show that a thinner Fe film has stronger ANE.When the thickness of the film increasing up to more than 50 nm,the ANE tends to be unchanged.This is consistent with the variation of resistivity of Fe film versus thickness.When the temperature difference is fixed,the anomalous Nernst voltages are proportional to the ratio of width to length of Fe films,that is,the wider film has a stronger voltage signal.However,the anomalous Nernst voltage remains unchanged at a unit width,indicating that the film geometry has a greater influence on ANE.The research results may guide the design on ANE devices.
关键词
反常能斯特效应/热电效应/磁控溅射/Fe薄膜
Key words
Anomalous Nernst effect/Thermoelectric materials/Magnetron sputtering/Fe thin films
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