Research on ultra-low power negative-capacitance transistor with Dirac-source
Due to the Boltzmann distribution of electrons/holes,the subthreshold swing(SS)of field effect transistors cannot be lower than 60 mV·dec-1 at room temperature,which prevents further reduction of transistor power consumption.The Dirac-source transistor and negative-capacitance transistor have achieved steep SS below 60 mV·dec-1 in different mechanisms,providing a new way to reduce transistor power consumption.In this article,for the first time,we combine the two physical processes in experiments,and demonstrate the ultra-low power negative-capacitance transistor with Dirac-source.The prepared device can achieve a steep subthreshold swing below 60 mV·dec-1,an ON state current of 10 μA,an OFF state cur-rent below 0.1 pA,and the overall current switching ratio exceeds 8 orders of magnitude.And the gate ca-pacitance of the device is well-matched,with only negligible hysteresis occurring.This work provides new possibilities for the field of ultra-low power electronic devices.
two-dimensional materialsnegative-capacitance transistorDirac-source transistorultra-low power consumptionsubthreshold swing