首页|用于碳化硅晶体生长的多孔碳化钽材料制造理论研究

用于碳化硅晶体生长的多孔碳化钽材料制造理论研究

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本研究旨在开发一种基于激光粉末床熔融(laser powder bed fusion,PBF-LB/M)技术的理论模型,以制备用于碳化硅(silicon carbide,SiC)晶体生长的多孔碳化钽(tantalum carbide,TaC)材料。目标是制备孔隙率约为 50%,平均孔径为 40 μm,厚度为 2 mm,直径为 300 mm的多孔TaC盘片。通过热场模拟和微观结构建模,优化工艺参数,并预测材料的力学和热物理性能。结果表明:PBF-LB/M工艺可以有效控制多孔TaC的孔隙结构和性能,为其在实际应用中的推广提供理论基础。通过有限元分析和模拟研究,研究人员确定了最佳的激光功率、扫描速度和层厚参数。这些优化参数不仅能实现均匀的热场分布,还能在材料的孔隙率和孔径方面达到预期目标。本研究为多孔TaC材料的产业化应用奠定了坚实的理论基础,并为进一步验证提供了详细的指导方向。
Theoretical Research on the Fabrication of Porous Tantalum Carbide Materials for Silicon Carbide Crystal Growth
This study aims to develop a theoretical model based on laser powder bed fusion(PBF-LB/M)technology for the fabrication of porous tantalum carbide(TaC)materials used in silicon carbide crystal growth.The goal is to fabricate porous TaC discs with a porosity of approximately 50%,an average pore size of 40 μm,a thickness of 2 mm,and a diameter of 300 mm.By conducting thermal field simulations and microstructure modeling,we optimize the process parameters and predict the mechanical and thermophysical properties of the material.The results indicate that the PBF-LB/M process can effectively control the pore structure and performance of porous TaC,providing a theoretical basis for its practical application.Through finite element analysis and simulation studies,we have identified the optimal laser power,scanning speed,and layer thickness parameters.These optimized parameters not only achieve uniform thermal field distribution but also meet the target porosity and pore size requirements.Ultimately,this study lays a solid theoretical foundation for the industrial application of porous TaC materials and provides detailed guidance for further experimental validation.

Tantalum carbide(TaC)Porous TaCSilicon carbide(SiC)crystal growth

张逊熙、曹洪涛、赵正星、范金桃

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赛迈科先进材料股份有限公司 浙江 湖州 313100

碳化钽(TaC) 多孔TaC 碳化硅(SiC)长晶

2025

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影响因子:0.246
ISSN:1009-5624
年,卷(期):2025.26(1)