首页|器件热阻随测试结温变化规律研究

器件热阻随测试结温变化规律研究

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为探究半导体分立器件电学法热阻测试时器件结温与热阻的变化规律,开展了基于热阻测试实验分析.详细介绍了热阻测试程序和典型热阻测试电路,并对4款典型VDMOS器件开展热阻测试,结合器件结构特性、热响应曲线和微观导热理论中声子导热系数与温度关系,研究获得器件热阻与结温的变化规律.通过热阻与结温的正相关性规律,有效提升器件在老炼和实际工况下结温计算的准确性.
Research on the Variation of Device Thermal Resistance With Test Junction Temperature
In order to explore the changes in device junction temperature and thermal resistance during electrical thermal resistance testing of discrete semiconductor devices,experimental analysis based on thermal resistance testing was conried out.This paper provides a detailed introduction to the thermal resistance testing program and typical thermal resistance testing circuits,and conducts thermal resistance testing on four typical VDMOS devices.Based on the structural characteristics and thermal response curves of the devices,and through the relationship between phonon thermal conductivity and temperature in micro thermal conductivity theory,the variation law of device thermal resistance and junction temperature is analyzed,effectively ensuring the accuracy of junction temperature calculation for devices under aging and actual working conditions.

semiconductor discrete deviceselectrical thermal resistancejunction temperaturethermal conductivity

吕贤亮、李旭、侯小利

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中国电子技术标准化研究院

半导体分立器件 电学法热阻 结温 导热系数

2024

信息技术与标准化
中国电子技术标准化研究所

信息技术与标准化

影响因子:0.219
ISSN:1671-539X
年,卷(期):2024.(4)
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