Research on Reliability Standards for Three-dimensional Stacked Chips with Through Silicon Via
This paper addresses the reliability challenges confronted by Through-Silicon Via(TSV)three-dimensional(3D)stacked chips in the realm of microelectronics packaging.It systematically presents the TSV 3D stacking process flow,meticulously analyzing the critical process stages including TSV hole fabrication,chip thinning,three-dimensional bonding,and assembly,with a focus on their implications for reliability.Furthermore,it delves into the matters of quality and reliability associated with TSV holes.Drawing upon the current reliability standards for TSV 3D stacked chips,the article specifies stress testing conditions for reliability and recommends inspection methodologies.Its aim is to furnish a scientific foundation and practical strategies for enhancing the reliability and manufacturing efficiency of TSV 3D stacked chips,thereby facilitating technological optimization and advancement.
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