首页|基于太赫兹真空器件的微型阴极抑制膜特性研究

基于太赫兹真空器件的微型阴极抑制膜特性研究

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为满足太赫兹真空器件对阴极的大电流密度、小电子注尺寸需求,利用双离子束辅助沉积技术在浸渍钪酸盐阴极表面沉积Ta/Zr抑制膜,并利用聚焦离子束刻蚀技术制备出发射面直径为100 μm的微型热阴极。在此基础之上着重研究这种阴极的抑制膜特性,研究表明,Ta/Zr膜层比Zr膜层临界附着力更强,双离子束辅助沉积制备的Ta/Zr抑制膜比磁控溅射制备的Ta/Zr抑制膜更加致密,并且抑制发射寿命更长。阴极良好的抑制效果一方面是因为Ba扩散至Zr中形成高功函数物质,另一方面是因为Ta/Zr复合膜层高度致密有效抑制了Ba的扩散。
Study on the characteristics of mini-cathode anti-emission coating based on THz vacuum devices
In order to meet the demand of THz vacuum devices for miniature electron beam with high current density,a kind of miniature cathode has been prepared by depositing Ta/Zr coating on impregnated scandate cathode surface via dual Ion-Beam-Assisted Deposition(Dual IBAD)and etching an emission zone with a diameter of 100 m via Focus Ion Beam(FIB).Based on the previous study,this paper focuses on the characteristics of anti-emission coating.It is shown in the experimental results that Ta/Zr coating prepared by dual Ion Beam Assisted Deposition(Dual IBAD)can suppress electron emission more effectively and has a longer life time than that prepared by magnetron sputtering.The reasons for the sound anti-emission performance are that composition with high work function is formed in the process of Barium diffusion into the Ta/Zr coating,and that Barium diffusion is effectively suppressed by the high dense Ta/Zr coating.

THz vacuum devicesmini cathodeDual Ion Beam Assisted DepositionTa/Zr anti-emission coating

张敏、张珂、杨鹏云

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中国电子科技集团公司 第十二研究所,北京 100015

太赫兹器件 微型阴极 双离子束沉积 Ta/Zr抑制膜

2024

太赫兹科学与电子信息学报
中国工程物理研究院电子工程研究所

太赫兹科学与电子信息学报

CSTPCD
影响因子:0.407
ISSN:2095-4980
年,卷(期):2024.22(1)
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