260 GHz GaN高功率三倍频器设计
Design of 260 GHz GaN frequency tripler with high output power
盛百城 1宋旭波 2顾国栋 1张立森 2刘帅 1万悦 1魏碧华 1李鹏雨 1郝晓林 1梁士雄 2冯志红2
作者信息
- 1. 中国电子科技集团公司第十三研究所,河北石家庄 050051
- 2. 固态微波器件与电路全国重点实验室,河北石家庄 050051
- 折叠
摘要
基于GaN太赫兹二极管芯片,采用非平衡式电路结构,设计了一款260 GHz三倍频器.采用GaN肖特基二极管芯片提高电路的耐受功率和输出功率;采用"减高+减宽"的输出波导结构抑制二次谐波;采用高低阻抗带线结构设计了倍频器的输入滤波器和输出滤波器.测试结果显示,该三倍频器在261 GHz峰值频率下,实现最大输出功率为69.1 mW,转换效率为3.3％,同时具有较好的谐波抑制特性.
Abstract
A 260 GHz frequency tripler based on GaN Schottky barrier diode is proposed.Unbalanced structure is adopted with GaN SBD chip to improve the tolerable power and output power of the circuit.The height-reduced and width-reduced output waveguide structure is employed to suppress the second harmonic.The input and output filter of the frequency multiplier is designed with high and low impedance strip line structure.The test results show that the frequency multiplier achieves a maximum output power of 69.1 mW and conversion efficiency of 3.3％at 261 GHz with good harmonic suppression characteristics.
关键词
三倍频器/太赫兹/肖特基二极管/非平衡式/倒装Key words
frequency triplier/terahertz/Schottky barrier diode/unbanlanced structure/flip-chip引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据