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一种基于CMOS的宽带抗阻塞射频接收机设计

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针对在多频段、多模式无线通信应用中传统射频接收机频段单一、集成度低的问题,基于N通道滤波技术与接收机集成化技术,提出一种基于互补金属氧化物半导体(CMOS)的宽带抗阻塞射频接收机。该接收机集成N通道混频器与基带滤波器,在65 nm CMOS工艺下进行版图测试。仿真实验结果表明,该接收机在5 MHz的基带带宽外提供超过60 dB的带外阻塞抑制,频率调谐范围0。25~2。5 GHz;前置内嵌巴伦的低噪声放大器,使接收机转换增益达到46 dB,同时降低整体噪声系数至3。1~4 dB;实现了24。5 dBm的带外三阶交调截取点(IIP3),功耗为26 mW。
Design of a broadband blocker-tolerant RF receiver based on CMOS
Aiming at the problem of single frequency band and low integration of traditional RF receivers in multi-band and multi-mode wireless communication applications,a broadband blocker-tolerant RF receiver based on Complementary Metal Oxide Semiconductor(CMOS)with N-path filtering and receiver integration technology is proposed.The receiver integrates an N-path mixer and baseband filter.Layout testing under 65 nm CMOS process shows that the receiver provides more than 60 dB of out-of-band rejection outside of the 5 MHz baseband bandwidth and frequency tuning range of 0.25~2.5 GHz.The front balun's low-noise amplifier achieves a receiver conversion gain of 46 dB while reducing the overall Noise Figure(NF)to 3.1~4 dB.The receiver also achieves 24.5 dBm Out-of-Band Third-order Intercept Point(IIP3)and consumes only 26 mW.

RF receiver N-path filterlow-noise amplifiermixerblocker-tolerant

杨静致、翁振豪、高志强、王琮

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哈尔滨工业大学航天学院,黑龙江 哈尔滨 150001

哈尔滨工业大学电子与信息工程学院,黑龙江 哈尔滨 150001

射频接收机N通道滤波器 低噪声放大器 混频器 抗阻塞

国家自然科学基金资助项目

NSFC20220286

2024

太赫兹科学与电子信息学报
中国工程物理研究院电子工程研究所

太赫兹科学与电子信息学报

CSTPCD
影响因子:0.407
ISSN:2095-4980
年,卷(期):2024.22(8)