MEMS Pirani meter integrated with silicon micro devices
In response to the existing challenges of difficult detection and potential leakage in wafer level vacuum packaging,a Pirani gauge design and processing method that is compatible with silicon micro-device processes and can be processed in parallel within the same cavity is proposed for vacuum degree detection after wafer-level vacuum packaging.The Pirani gauge structure is processed using SOI silicon wafers,and the device is packaged at the wafer level through gold-silicon bonding.At the same time,the longitudinal electrode lead-out method of Through Silicon-Vias(TSV)is adopted to improve the gas sealing issue.Test results show that the temperature coefficient of the Pirani gauge resistance in the linear range is 1.58 Ω/℃,the detection sensitivity range is about 1～100 Pa,and the sensitivity reaches 61.67 Ω/ln(Pa).The proposed Pirani gauge can be processed in parallel with silicon micro-devices,providing a simple and feasible solution for in-wafer testing of the vacuum degree in wafer-level vacuum packaging cavities.
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