As the main-stream technology to fabricate the deep-submicron T-gates of high-frequency GaN HEMT(High Electron Mobility Transistor)in industry,electron beam lithography faces the problems of low efficiency,insufficient yield,and high cost.In this paper,an 80 nm T-gate GaN HEMT with pure optical exposure has been successfully manufactured for the first time on a 6-inch industrial production line using integrated side wall technology,and the performance parameters of the device are comprehensively characterized and analyzed.The device displays a maximum output current per unit(millimeter)gate width of 993 mA,a peak transconductance of per unit(millimeter)gate width 385 mS,a threshold voltage of-3.25 V,an off-state breakdown voltage exceeding 80 V,and a fT/fmax of 64/175 GHz.When operated at 28 V,the saturated output power,the associated power gain,and the power added efficiency of the device at 16 GHz are 26.95 dBm(4.9 W per millimeter),11.08 dB,and 49.78%respectively;while at 30 GHz,these data are 26.15 dBm(4.1 W per millimeter),8.8 dB,and 44%respectively.The results show that the integrated sidewall technology has a good application prospect in deep-submicron GaN HEMT manufacturing.
关键词
氮化镓高电子迁移率晶体管/光学栅/侧墙/短沟道效应/深亚微米
Key words
GaN High Electron Mobility Transistor/optical gate/sidewall/short channel effect/deep-submicron
万方数据