To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research,two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)switches in series are used.By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits,narrow pulses are generated.Based on the actual working requirements of the switches,adaptive design and simulation optimization of the narrow pulse generation circuit are carried out;according to the optimization results,an experimental device for narrow pulse generation circuit is built.After testing,a pulse output with a peak voltage about 10 kV,a half-width about 10 ns,and a front edge about 6 ns is obtained on a load of 500 Ω.
关键词
全固态脉冲源/窄脉冲发生器/10/ns半高宽/等离子体应用
Key words
all-solid-state pulse source/narrow pulse generator/duration 10 ns at half maximum voltage/plasma application
维普
万方数据