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一种10 kV/10 ns/20 A全固态脉冲源设计

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为获得等离子体研究所需的半高宽约10 ns的高压高重复频率脉冲输出,采用金属氧化物半导体场效应晶体管(MOSFET)开关串联构成的2组高压开关模块,利用传统电容储能脉冲产生电路和脉冲切尾电路相结合产生窄脉冲。结合开关实际工作需求,开展了窄脉冲产生电路适应性设计及仿真优化;依据优化结果,搭建窄脉冲产生电路实验装置。经测试,在500 Ω负载上获得了峰值电压约10 kV、半高宽约10 ns、前沿约6 ns的脉冲输出。
Design of a 10 kV/10 ns/20 A all solid state pulse generator
To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research,two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET)switches in series are used.By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits,narrow pulses are generated.Based on the actual working requirements of the switches,adaptive design and simulation optimization of the narrow pulse generation circuit are carried out;according to the optimization results,an experimental device for narrow pulse generation circuit is built.After testing,a pulse output with a peak voltage about 10 kV,a half-width about 10 ns,and a front edge about 6 ns is obtained on a load of 500 Ω.

all-solid-state pulse sourcenarrow pulse generatorduration 10 ns at half maximum voltageplasma application

石小燕、杨浩、郑强林、闫二艳、鲍向阳

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中国工程物理研究院 应用电子学研究所,四川 绵阳 621999

中国工程物理研究院 高功率微波技术重点实验室,四川 绵阳 621999

全固态脉冲源 窄脉冲发生器 10 ns半高宽 等离子体应用

国家自然科学基金资助项目

62001442

2024

太赫兹科学与电子信息学报
中国工程物理研究院电子工程研究所

太赫兹科学与电子信息学报

CSTPCD
影响因子:0.407
ISSN:2095-4980
年,卷(期):2024.22(10)