首页|Ag/BiOCl复合纳米薄膜的合成及光催化性能研究

Ag/BiOCl复合纳米薄膜的合成及光催化性能研究

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研究了贵金属Ag修饰对新型半导体BiOCl薄膜材料光催化性能的影响.采用溶胶-凝胶浸渍提拉法先在ITO玻璃上制备了BiOCl薄膜.以其为基底用磁控溅射方法沉积少量的Ag制备Ag/BiOCl复合纳米薄膜.分别研究了不同沉积时间和溅射气压,以及后处理温度下获得的Ag/BiOCl薄膜对罗丹明B(Rh B)染料在紫外光下的光催化降解活性.结果发现适量的Ag修饰能够提高BiOCl薄膜的光催化活性.通过实验探索,当制备金属Ag的优化参数为溅射压强1 Pa,溅射时间1 s,后处理温度200℃,时间1h时获得的Ag/BiOCl复合纳米薄膜具有最好的光催化性能.用XRD,SEM,UV-Vis光谱等测试方法对其结构、形貌、光谱吸收性等进行了测量分析.进一步探讨了适量贵金属沉积对BiOCl薄膜光催化活性提高的可能原因,杂质能级形成的肖特基势垒对电子有捕获陷阱作用从而增加电子-空穴对的分离,同时利于光生载流子的重新分布.
Synthesis and Photocatalytic Properties of Ag/BiOCl Compound Nanofilms
BiOCl granular film was crystallized on indium tin oxide (ITO) substrates via a simple sol-gel dip-coating technique firstly. Then a bit of Ag was loaded on BiOCl surface by a direct current magnetron sputtering system, and the Ag/BiOCl compound nano-film was got. Photocatalytic activity was evaluated by photocatalytic degradation of Rhodamine B under UV illumination of diverse compound nanofilms which were obtained by varying sputtering time, sputtering pressure and annealing temperature. The experiments demonstrated that the suitable amount of Ag loading could enhance the photocatalytic activity of BiOCl film. When the sputtering pressure was 1 Pa, sputtering time was 1 s, anneal temperature was 200 t and annealing time was 1 h, the film had the best photocatalytic property. These photocatalysts were characterized by X-ray diffraction, scanning electron microscopy, UV-Vis spectrum. Furthermore, the probable reasons for the increase photocatalytic activity of the BiOCl film by loading suitable amount of Ag was discussed. Because of the formation of Schottky barrier by impurities level, it could capture the electrons to promote the separation of electron-hole pair, and at the same time benefit to the redistribution of photo-generated carriers.

Ag/BiOClcompound nanofilmphotocatalysismagnetron sputter

张放放、王聪、吴素娟、崔银芳、程久珊、王天民

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北京航空航天大学凝聚态物理与材料中心,北京100191

Ag/BiOCl 复合纳米薄膜 光催化 磁控溅射

国家重点基础研究发展规划(973计划)国家自然科学基金

2007CB61330250972002

2012

稀有金属
北京有色金属研究总院

稀有金属

CSTPCDCSCD北大核心
影响因子:1.483
ISSN:0258-7076
年,卷(期):2012.36(2)
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