Research and Realization of Single Spin Qubits Based on Silicon MOS Quan-tum Dots
As a future-oriented computing technology,quantum computing has unparalleled advantages over the application of mod-ern computers in some specific fields,which makes the realization of universal quantum computing become an important research di-rection.As one of the candidates for universal quantum computing,qubit based on silicon quantum dots has attracted much attention due to the long qubit decoherence time brought by the material characteristics of silicon and the advantages of compatibility with CMOS technology.At present,the research of this scheme has reached the important stage of introducing advanced CMOS technology to real-ize the extension and integration of qubits.In this paper,the realization scheme of single spin qubit in silicon MOS quantum dots was systematically summarized.Firstly,the research background and significance of quantum computation of silicon quantum dots were in-troduced.Then the research progress of single spin quantum ratio of silicon MOS quantum dots was described in detail.The device of MOS quantum dots was analyzed,including the basic quantum dot structure,the different types of MOS quantum dots and the fabrica-tion process.The charge transport theory in quantum dots was introduced,which included the charge transport in single quantum dot and double quantum dots,and the principle as well as characterization method of pauli spin blockade effect.The methods of readout of quantum bits were also analyzed,which included the readout by spin-to-charge conversion method using different type of charge sen-sors,like quantum point contact,single field transistor and gate-based sensor.The single spin state could be readout by the charge sensors technology,which included three steps:empty,inject & wait and read-out.The energy-selective read-out method was intro-duced in details.Also,single spin state operation of quantum bits was analyzed in details,which included the rabi cycle in two-energy-level system,the principle and realization method of electron spin resonance in MOS quantum dot.The electric dipole spin resonance in silicon quantum dot structure was also presented.The controlled NOT gate operation was analyzed by taking the case of Zajac's re-search in Si/SiGe structure.The qubit decoherence effect and the suppressing methods about spin qubits were analyzed,including the spin relax time(T1),qubit phase decoherence time(T2)and their measurement methods.The different means for extending the qubit decoherence time were also introduced.Then,the extension and integration of qubit in quantum dots for the quantum computing were analyzed in details,including the whole quantum computing structure and different qubit operation methods.Finally,the challenges and future development trend of spin qubits in silicon MOS quantum dots were illustrated.Thanked for the mature CMOS technology for fabrication of silicon-based quantum dots qubit and the electrical advantages of silicon-based qubit,single spin qubits based on sili-con MOS quantum dots might be the great competitor for releasing the universal quantum computing.
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