首页|Ru0.26Sb2Te3合金靶的制备方法及性能研究

Ru0.26Sb2Te3合金靶的制备方法及性能研究

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贵金属Ru掺杂的Sb2Te3相变材料有望改进Sb2Te3结晶温度低、非晶热稳定性差等问题,以满足相变存储器稳定工作的需求。以Ru∶Sb∶Te=0。26∶2∶3(原子比)的Ru0。26Sb2Te3合金粉、Ru+Sb+Te混合粉以及Ru+Sb2Te3混合粉这3种不同体系为原料,经真空热压制备出用于溅射沉积Ru0。26Sb2Te3薄膜的三元靶材,通过X射线衍射(XRD)、扫描电镜(SEM)、共聚焦激光扫描显微镜等分别表征靶材物相、成分、显微组织、元素分布等。结果表明:以Ru0。26Sb2Te3合金粉为原料可制备出成分准确、相对密度达99。5%以上的合金靶材,Ru元素以RuTe2的形式均匀分布于Sb2Te3基体相中,且Ru元素掺杂未对Sb2Te3主相的品格常数产生明显影响。Ru+Sb+Te混合粉及Ru+Sb2Te,混合粉原料体系所制备Ru0。26Sb2Te,三元靶材的主要物相仍是Sb2Te3相,Ru元素以Ru单质形式存在于靶材中,且相对于Ru0。26Sb2Te3合金粉原料体系,两混合粉原料体系中Ru元素相对集中于某些区域,并未完全分散于整个基体相中。采用Ru0。26Sb2Te,合金粉原料体系制备的三元合金靶材更有望用于Ru-Sb-Te系列相变薄膜的制备。
Preparation and Properties Research of Ru0.26Sb2Te3 Alloy Target
Phase-change random access memory(PCRAM)is regard as the leading candidate for next generation electronic memory hierarchy.Sb-Te based alloys have received a lot of attention in recent years,because of its high crystalline growth velocity and poten-tial as phase change material application.However,the practical application of such materials is severely hindered by several bottle-necks,such as poor thermal stability,low crystallization temperature.It has been shown that Ru doped Sb2Te3 phase change material is expected to improve the low crystallization temperature and poor thermal stability of Sb2Te3 to meet the stable operation requirements of phase-change memory stability.The preparation of Ru doped Sb2Te3 alloy targets was studied in this paper.Three different raw mate-rial systems were compared:(1)Ru0.26Sb2Te3 alloy powder,(2)Ru+Sb+Te mixed powder and(3)Ru+Sb2Te3 mixed powder,in which the atomic ratio of each element was Ru∶Sb∶Te=0.26∶2∶3.For Ru0.26Sb2Te3 alloy powder system,the powder was prepared by mixing elemental powders of Ru,Sb and Te in a quartz tube and sealing in vacuum,then Ru-doped Ru0.26Sb2Te3 alloy powder was pre-pared by vacuum melting,mechanical crushing and sieving.The raw material systems of Ru+Sb+Te and Ru+Sb2Te3 mixed powder were obtained by ball milling three elemental powders of Ru,Sb and Te,the powder of Ru and the alloy powder of Sb2Te3,respective-ly.Sputtering targets using these powder systems were then prepared by vacuum hot pressing method under 540 ℃ for 40 Mpa and 3 h.The phase structure,composition,microstructure and element distribution of the targets were characterized by means of X-ray diffrac-tion(XRD),chemical titration,scanning electron microscope(SEM),energy dispersive analysis(EDS)and confocal laser scanning microscope(CLSM).The actual density of the targets was measured by Archimedes Principle,and the relative density of the target was obtained by comparing with the theoretical density.The results showed that by controlling the input ratio of three elemental powder during vacuum melting,the composition of both the alloy powder and alloy target sample could accord well with the theoretical stoichio-metric ratio,in which Ru,Sb and Te contents of alloy powder were 5.40%,36.11%and 58.49%(atom fraction),and Ru,Sb and Te contents of alloy target were 5.29%,37.06%and 57.65%(atom fraction),respectively.Most of the diffraction peaks of the alloy pow-der corresponds to the characteristic peaks of Sb2Te3phase,three major diffraction peaks were(015),(0015)and(1010),which meant Sb2Te3 was formed during the melting process.The characteristic peaks of RuTe2 phase with three major peaks of(111),(120)and(200)were also visible,and no elemental Ru peak was observed.The main phases of the target were matrix phase Sb2Te3 and RuTe2,and RuTe2 phase was uniformly distributed in the matrix phase.By comparing the lattice constant of Sb2Te3 powder and Ru0.26Sb2Te3 powder,the addition of Ru element had no significant effect on the lattice constant of Sb2Te3 phase.After doping Ru ele-ment,the lattice constant of Sb2Te3 phase changed from a=0.4264 nm and c=3.0421 nm to a=0.4264 nm and c=3.0419 nm.From the confocal laser scanning microscope picture,it could be seen that the microstructure distribution on the surface and the cross-sectional of the target were basically the same,and there were merely no defects such as porosity.The element distribution mapping results showed that Ru,Sb and Te elements were uniformly distributed on the surface of the target.The density of this target measured by Ar-chimedes Principle was 6.62 g·cm-3,and the relative density reached 99.83%,which could meet the film sputtering application re-quirements.The main phase of Ru0.26Sb2Te3 ternary target prepared by Ru+Sb+Te mixed powder and Ru+Sb2Te3 mixed powder raw ma-terial system was also Sb2Te3 phase,with Ru existed in the target in the form of elemental phase.The major XRD peaks of target pre-pared by Ru+Sb+Te mixed powder raw material system was(015),(1010)and(110),which were different from that of Ru0.26Sb2Te3 alloy powder and Ru+Sb2Te3 mixed powder raw material system,indicating the preferred orientation of Sb-Te alloy in the Ru+Sb+Te mixed powder might be different from Ru0.26Sb2Te3 alloy powder and Ru+Sb2Te3 mixed powder.From the surface element distribution mapping,it could be seen that compared with Ru0.26Sb2Te3 alloy powder raw material system,Ru element in two mixed powder raw ma-terial system was relatively concentrated in some regions,and was not completely dispersed in the entire matric phase.The density of the targets obtained from Ru+Sb+Te mixed powder and Ru+Sb2Te3 mixed powder raw material system was 6.55 and 6.50 g·cm-3,with the relative density of 98.79%and 98.04%respectively,which were lower than the target prepared by Ru0.26Sb2Te3 alloy powder raw material system.Therefore,the ternary alloy target prepared by the raw material system of Ru0.26Sb2Te3 alloy powder was more likely to be used in the preparation of Ru-Sb-Te series phase change memory thin films.

sputtering targetphase-change memory materialRu dopedSb-Te alloy

施晨琦、宁哲达、陈天天、闻明、管伟明、王传军

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昆明贵金属研究所,昆明贵研新材料科技有限公司,稀贵金属综合利用国家重点实验室,贵研铂业股份有限公司,云南昆明 650106

溅射靶材 相变存储 Ru掺杂 Sb-Te合金

云南省重大科技专项项目云南省创新人才项目

202002AB080001-1-7202005AD160029

2024

稀有金属
北京有色金属研究总院

稀有金属

CSTPCD北大核心
影响因子:1.483
ISSN:0258-7076
年,卷(期):2024.48(4)
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