Application and Development of Glow Discharge Optical Emmission Spectrome-try in Characterization of New Materials
The applications of glow discharge optical emmission spectrometry(GDOES)in the field of semiconductor materials and electronic components,new energy materials and non-conductor materials,and the new applications of in the field of traditional mate-rials were introduced in this review.GDOES analysis included two processes:glow discharge and spectral analysis.The main charac-teristics of different surface analysis techniques for auger electron spectroscopy(AES),rutherford back scattering spectroscopy(RBS),X-ray photoelectron spectroscopy(XPS),secondary ion mass spectrometry(SIMS)and GDOES were described.The maxi-mum analytical depth of AES and XPS was in the submicron range,which made it impossible to study thicker coatings.RBS,SIMS and GDOES were all ion detection technologies with analytical depth of several microns and nanometer-level resolution.GDOES could also analyze the ultraviolet elements such as H,O,C and N,which had a stronger analytical ability than AES and other large regions,and could be used to complete the characterization of macroscopic components of materials.The current commercial glow discharge spectrometer had a rapid reaction rate up to micron/minute,which could detect the subtle changes in the electron bombardment pro-cess and improve the accuracy of the material composition test.The plasma sputtering energy for incident particles of GDOES was low(50 eV),and could not cause great damage to the surface of the material structure in the sputtering process,and the uniformity of ma-terial surface could also be accurate characterized.GDOES sputter pits could be used to perform XPS,scanning electron microscopy(SEM)tests,provide samples for relevant tests,and could provide multiple and complementary information for materials.In recent years,GDOES had been widely used in semiconductor industry such as LED chips,lithium-ion batteries,solar photovoltaic cells and micro-electronic devices.Semi-conductor devices had multi-layer structure and the interlayer bonding was mostly atomic.General chemical means could not provide accurate chemical composition information,especially could not provide depth composition distribu-tion information.GDOES had been used in the research and development of semiconductor materials and electronic components in re-cent years for its rapid analysis of non-conductor,semiconductor depth profile composition,strong depth analysis ability.With the in-creasing researches of new energy materials,the gradient distribution of chemical composition of electrode films and materials was very urgent.In addition to Li,Ni,Co,Mn,Fe,Cu,Al and rare earth elements,the chemical composition of the electrode would also involve ultraviolet elements in the electrolyte such as H,O,C and N with GDOES.GDOES could not only realize rapid detection and full element detection,but also provide information of ultraviolet elements such as H,O,C and N.Therefore,GDOES detection was involved in more researches with new energy materials.The solid direct detection of non-conductor was always key point of research for its poor electrical conductivity,and many detections means using electrical signals could not be used.In recent years,with the devel-opment of the pulse discharge method,GDOES with glow discharge and the cathode sputtering method could be used to measure the non-conductive materials with changing the electric field direction.GDOES had been applied more widely in the study of non-conduc-tor materials,which could be used for the quantitative analysis of matrix elements and the quantitative depth profile analysis of coating of various non-conductors.The initial application of GDOES detection was mainly concentrated in the steel,non-ferrous and other tra-ditional industries.With the technical improvement of the traditional industry,GDOES had also shown many new applications in the field of traditional materials.GDOES was widely used in alloy,electroplate,paint coating,nitric compounds,oxides,organics,ce-ramics,semiconductors,glass and other fields because of its ability to carry out quantitative analysis of matrix elements and quantita-tive depth profile analysis of coating of all kinds of conductor and non-conductor samples.Combined with GDOES analysis of the pres-ence of horizontal analysis of element distribution limitations,the recent GDOES horizontal analysis ability of the latest research was focused.GDOES analysis had horizontal resolution limitation of element distribution,and the element of transverse distribution of the study of chemical heterogeneity material is critical.Many researchers started to improve GDOES transverse analysis ability in order to realize the element distribution in two-dimensional or three-dimensional drawing.Through monochrome imaging spectrometer,acousto-optic tunable filter,push-sweep hyperspectral imager and other technology applications,GDOES could achieve element two-dimen-sional or three-dimensional mapping distribution.The research of chemical heterogeneous materials would be promoted,and the im-provement of horizontal analysis ability would be an important direction for the development of GDOES.
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