Research Progress of Cu Nanoparticle Sintering Technology for Power Electronic Packaging
With the rapid development of the third-generation semiconductors SiC and GaN,traditional packaging materials,such as Si-based lead-free solder,cannot satisfy the requirements of high-power density and high-temperature loading in power electronic devices any more.Nowadays,the joints packaged by Cu nanoparticle sintering technique can not only be bonded at low-temperature and then serve at high-temperature,but also exhibit excellent thermal conductivity,electrical conductivity and relatively lower cost comparing with Ag nanoparticles.Thus,more and more attention has been attracted in the field of Cu nanoparticle sintering technique for power electronic packaging,which makes Cu nanoparticles become one of the most potential high-temperature-resistant packaging and interconnection materials.In this work,the current research progress of Cu nanoparticle sintering technique was summarized,including the fabrication of Cu nanoparticle pastes,the factors affecting the performance of sintered joints and the reliability of joints.Meanwhile,the oxidation behavior as well as the anti-oxidation methods of Cu nanoparticle were introduced.Besides,the high-temperature working reliability and failure mechanism of Cu nanoparticle sintered joints were discussed.This review aims to promote the application of low-cost Cu nanoparticle sintering technique for high-performance and high-reliability power electronic packaging.
power electronic devicesthird-generation semiconductorchip packagingCu nanoparticlelow-temperature sinteringreliability
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