压强对HfO2薄膜表面石墨烯合成的影响研究
Research on Influence of Pressure on Graphene Synthesis on HfO2 Film Surface
武海进 1王伟 1杨玉帅 1樊瑞祥1
作者信息
- 1. 河北工业大学 电子信息工程学院,天津 300401;天津市电子材料与器件重点实验室,天津 300401
- 折叠
摘要
采用真空电子束蒸镀工艺制备HfO2 高K介质薄膜,并在HfO2 衬底表面使用等离子体增强化学气相沉积(PECVD)工艺无转移制备石墨烯.通过GIXRD、AFM、阻抗分析仪和激光拉曼光谱仪等,研究了生长温度对 HfO2薄膜微观结构、表面形貌和介电性能的影响,以及反应总压强对HfO2 衬底表面石墨烯生长的影响.结果表明,生长温度为250℃时HfO2 薄膜具有最优的表面形貌(RMS=0.232 nm),为非晶态且相对介电常数最高(22.34).适当的反应总压强能够平衡碳物种的传输与石墨烯的生长速率,促进反应物的均匀分布,从而改善石墨烯薄膜的质量.随着反应总压强的升高,石墨烯薄膜的质量先提高后降低,在150 Pa压强条件下可获得表面光滑、缺陷水平最低的少层石墨烯薄膜.
Abstract
HfO2 high-K dielectric films were prepared by vacuum electron beam evaporation,and graphene was prepared without transfer on the surface of HfO2 substrate by PECVD.The effects of growth tempera-ture on the microstructure,surface morphology,and dielectric properties of HfO2 films were studied by GIXRD,AFM,impedance analyzer,and laser Raman spectrometer,as well as the effect of total reaction pressure on the growth of graphene on the surface of HfO2 substrate.The results indicate that the HfO2 film grown at 250℃exhibits an optimal surface morphology(RMS=0.232 nm),with amorphous struc-ture and the highest relative dielectric constant(22.34).Appropriate total reaction pressure can balance the transport of carbon species and the growth rate of graphene,promote the uniform distribution of reactants,and thus improve the quality of graphene films.With the increase of total reaction pressure,the quality of graphene films increases first and then decreases.The few-layer graphene film with smooth surface and minimal defect level can be obtained at the pressure of 150 Pa.
关键词
HfO2/石墨烯/薄膜/高K介质/真空电子束蒸镀/等离子体增强化学气相沉积/生长温度/压强Key words
HfO2/graphene/film/high-K dielectric/vacuum electron beam evaporation/plasma enhanced chemical vapor deposition/growth temperature/pressure引用本文复制引用
出版年
2024
NETL
NSTL
万方数据