Research on Influence of Pressure on Graphene Synthesis on HfO2 Film Surface
HfO2 high-K dielectric films were prepared by vacuum electron beam evaporation,and graphene was prepared without transfer on the surface of HfO2 substrate by PECVD.The effects of growth tempera-ture on the microstructure,surface morphology,and dielectric properties of HfO2 films were studied by GIXRD,AFM,impedance analyzer,and laser Raman spectrometer,as well as the effect of total reaction pressure on the growth of graphene on the surface of HfO2 substrate.The results indicate that the HfO2 film grown at 250℃exhibits an optimal surface morphology(RMS=0.232 nm),with amorphous struc-ture and the highest relative dielectric constant(22.34).Appropriate total reaction pressure can balance the transport of carbon species and the growth rate of graphene,promote the uniform distribution of reactants,and thus improve the quality of graphene films.With the increase of total reaction pressure,the quality of graphene films increases first and then decreases.The few-layer graphene film with smooth surface and minimal defect level can be obtained at the pressure of 150 Pa.
HfO2graphenefilmhigh-K dielectricvacuum electron beam evaporationplasma enhanced chemical vapor depositiongrowth temperaturepressure
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