Characteristics of SnS thin films prepared by radio frequency magnetron sputtering
Using radio frequency magnetron sputtering,SnS thin film were prepared on glass and silicon(Si)substrates under different sputtering pressures to investigate the effect of sputtering pressure on the characteristics of SnS thin films.Characterization of SnS thin films using X-ray Diffraction showed that all films grew preferentially along the(111)plane,and the crystallinity of the films was best when the sputtering pressure was 0.8 Pa;Using field emission scanning electron microscopy to test SnS thin films,the results showed that with the change of pressure,the grain structure also underwent significant changes;The measurement of SnS thin films using a UV-Vision-near-infrared spectrophotometer showed that the films grown at a working pressure of 0.8 Pa have the maximum optical bandgap value.The research results can provide reference for the application of SnS semiconductor thin films.
radio frequency magnetron sputteringsputtering pressureSnS thin filmthin film structureoptical performance
万方数据
