MEMS正装传感器复合钝化层高温可靠性的研究
Study of High Temperature Reliability of Composite Passivation Layers for MEMS Orthotropic Sensors
刘润鹏 1赵妍琛 2刘东 3雷程 1梁庭 1冀鹏飞 1王宇峰1
作者信息
- 1. 中北大学,省部共建动态测试技术国家重点实验室
- 2. 西安航天动力研究所
- 3. 淮海工业集团有限公司
- 折叠
摘要
绝缘体上硅(SOI)所制备的压阻式正装压力传感器可在高温下良好工作,但高温环境下电阻条和金属引线长期暴露在环境中易受到氧化和腐蚀,对传感器的输出造成影响,使电学性能发生变化甚至失效,为避免这种情况,通常在表面进行钝化处理.文中采用SiO2-Si3 N4 复合钝化层对SOI正装传感器芯片进行钝化,并且对钝化层进行高温老化考核,模拟高温和恶劣环境,验证其高温可靠性.实验结果表明:按照SiO2 厚度为200 nm、Si3 N4 厚度为 300 nm的SiO2-Si3 N4 复合钝化层能在 350℃高温下对正装传感器进行有效保护且电学性能完好,满足芯片在高温下可靠性的要求.
Abstract
Piezoresistive orthotropic pressure sensors prepared by silicon on insulator(SOI)can work well at high tempera-tures,but the resistive strip and metal leads are susceptible to oxidation and corrosion when exposed to the environment for a long time in high temperature environments,which affect the output of the sensors and change or even invalidate the electrical performance,and passivation is usually carried out on the surface in order to avoid this situation.In this paper,a composite passivation layer of silicon dioxide and silicon nitride was used to passivate the SOI orthotropic sensor chip,and the passivation layer was subjected to a high-temperature aging test to simulate high temperatures and harsh environments and verify its high-temperature reliability.The experimental results show that according to the silicon dioxide 200 nm,silicon nitride 300 nm silicon dioxide silicon nitride com-posite passivation layer can be at a high temperature of 350℃on the orthotropic sensors for effective protection and electrical performance is intact to meet the requirements of the chip reliability at high temperatures.
关键词
绝缘体上硅(SOI)/压阻式正装压力传感器/复合钝化层/高温可靠性Key words
silicon on insulator(SOI)/piezoresistive orthotropic pressure sensors/composite passivation layer/high temperature reliability引用本文复制引用
基金项目
山西省科技重大专项"揭榜挂帅"项目(202201030201004)
山西省重点研发计划项目(202102030201001)
山西省重点研发计划项目(202102030201009)
出版年
2024
NETL
NSTL
万方数据