Design and Simulation Study of Low Lateral Sensitivity Piezoresistivity Accelerometer Based on 4H-SiC
This article designed a slotted low lateral sensitivity piezoresistive accelerometer based on 4H-SiC.The relevant structural parameters were determined by analyzing the influence of support beam position and slotting on the performance of the sensor chip.The thermal mechanical coupling simulation of the structure was carried out using finite element method to determine the theoretical voltage output of the structure under different loads applied in the 600℃temperature field.The research results show that compared with the existing double ended four beam structure,the lateral sensitivity in the X-axis direction of this struc-ture decreases from 3.3%to 2.6%,and the lateral sensitivity in the Y-axis direction decreases from 29.9%to 1.5%.The sensor chip has a linear relationship between input load and output voltage in a high temperature environment of 600℃,and the theore-tical output voltage under a 100g load is 3.65 mV.
4H-SiClow lateral sensitivitypiezoresistive accelerometerfinite element methodthermal mechanical coupling simu-lation
万方数据
维普
