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微型FBAR器件性能优化设计

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利用有限元仿真软件建立了薄膜体声波谐振器模型,研究了不同谐振面积(3 600~10 000 μm2)条件下,电极形状(矩形、梯形、圆形和正五边形)及变迹角(30°、36°、40°和45°)对寄生谐振的影响,得到史密斯阻抗曲线和不圆度值,讨论了阶梯负载结构对横向声波泄露的抑制作用.仿真结果表明,电极形状为非正五边形,变迹角为40°时,对寄生谐振的抑制效果最好;在谐振面积为3 600 μm2 时,其不圆度为6.45%,与谐振面积为10 000 μm2 时矩形电极相当.设计的电极阶梯负载结构提升了并联谐振点处的品质因数,当电极横向尺寸为60 μm时,二阶电极负载结构的品质因数为1 378,比无电极负载结构的品质因数高10.07%.
Performance Optimization Design of Miniature FBAR
Using finite element simulation software,the film bulk acoustic resonator(FBAR)model was estab-lished.The study focused on investigating the effects of different electrode shapes(rectangular,trapezoidal,circu-lar,and regular pentagonal)and apodization angles(30°,36°,40°,and 45°)on parasitic resonances under different resonant areas(3 600-10 000 μm2).The smith impedance curves and non-circularity values were obtained.The study also explored the suppression effects of stepped load structures on lateral acoustic wave leakage.The simula-tion results show that the non-regular pentagonal electrode shape with a apodization angle of 40° exhibits the best suppression effect on parasitic resonances.For the resonant area of 3 600 μm2,its non-circularity value is 6.45%,which is comparable to the rectangular electrode at a resonant area of 10 000 μm2.The designed stepped load struc-ture significantly enhances the quality factor at the parallel resonance point.With a lateral dimension of 60 μm,the second-order electrode load structure achieves a quality factor of 1 378,which is 10.07%higher than that of the structure without electrode load.

film bulk acoustic resonator(FBAR)finite element simulationresonant areaparasitic resonancequality factor

周晓伟、吴秀山、孙坚、徐红伟

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中国计量大学 机电工程学院,浙江 杭州 310018

浙江水利水电学院 电气工程学院,浙江 杭州 310018

薄膜体声波谐振器 有限元仿真 谐振面积 寄生谐振 品质因数

浙江省自然科学基金

LY21F040001

2024

压电与声光
四川压电与声光技术研究所

压电与声光

CSTPCD北大核心
影响因子:0.357
ISSN:1004-2474
年,卷(期):2024.46(1)
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