杂模抑制薄膜体声波谐振器的仿真分析
Simulation Analysis of a Thin-Film Bulk Acoustic-Wave Resonator for Spurious-Mode Suppression
罗恩雄 1张必壮 1吴坤 1马晋毅 1李思忍2
作者信息
- 1. 中国电科芯片技术研究院,重庆 401332
- 2. 柳州市计量技术测试研究所,广西 柳州 545001
- 折叠
摘要
该文研究了电极边界阶梯结构对薄膜体声波谐振器(FBAR)杂波的影响.采用有限元仿真法讨论了阶梯结构宽度尺寸对杂波的抑制效果,结合振型分析该结构能抑制声波能量的泄露,提高器件品质因数.为了进一步验证仿真结果,实验制备了 FBAR器件.测试结果表明,当该阶梯结构凸起宽度为 3 μm,凹陷宽度为 1.5 μm时,谐振器杂波被有效抑制,反谐振频率处的品质因数约增大 100.
Abstract
In this study,the effect of the electrode-boundary step structure on the spurious mode of thin-film bulk acoustic resonators(FBARs)is investigated.The finite-element simulation method is used to investigate the effect of the width dimension of the step structure on the suppression of spurious modes.The step structure is ana-lyzed in conjunction with the vibration pattern to suppress the leakage of acoustic energy and to improve the quality factor of the device.To further verify the simulation results,FBAR devices are experimentally prepared.The re-sults show that when the width of the raised frame is 3 μm and the width of the recessed frame is 1.5 μm,the re-sonator spurious mode is effectively suppressed and the quality factor at the anti-resonance frequency is increased by about 100.
关键词
薄膜体声波谐振器(FBAR)/阶梯结构/杂模抑制/有限元Key words
thin film bulk acoustic resonators(FBAR)/step structure/spurious mode suppression/finite ele-ment引用本文复制引用
出版年
2024
NETL
NSTL
万方数据