低温度敏感度谐振式压力传感器设计与仿真
Design and Simulation of a Low-Temperature Sensitive Resonant Pressure Sensor
李光贤 1黄晶 2袁宇鹏 2杨靖 2李春洋 1张祖伟 2龙帅1
作者信息
- 1. 中电科芯片技术(集团)有限公司,重庆 401332;国知创芯(重庆)科技有限公司,重庆 401332
- 2. 中电科芯片技术(集团)有限公司,重庆 401332;国知创芯(重庆)科技有限公司,重庆 401332;中国电子科技集团公司 第二十六研究所,重庆 400060
- 折叠
摘要
为降低材料杨氏模量温度漂移和热应力对谐振式压力传感器温度漂移的影响,该文设计了一种基于Si-SiO2 复合 H 形谐振梁和双谐振器结构的低温度敏感度谐振压力传感器.通过有限元仿真软件 COMSOL对传感器进行仿真验证.结果表明,在 0～350 kPa内传感器灵敏度可达 21.146 Hz/kPa,-50～125℃内零点温度漂移低至 0.2 Hz/℃.与全硅结构相比,灵敏度温度漂移由 339×10-6/℃降低至 14.1×10-6/℃,可适应工作温度范围较高的环境.
Abstract
To reduce the influence of the change in Young's modulus with changes in temperature and thermal stress on the temperature drift of a resonant pressure sensor,a low-temperature-sensitivity resonant pressure sensor based on a Si-SiO2 composite H-shaped resonant beam and double resonator structure was designed.The finite ele-ment simulation software COMSOL was used to simulate the sensor,and the results showed that the sensitivity of the sensor could reach 21.146 Hz/kPa in the range of 0-350 kPa,and the zero temperature drift in the range of-50℃to +125℃was as low as 0.2 Hz/℃.Compared with anall-silicon structure,the sensitivity temperature drift was reduced from 339×10-6/℃to 14.1×10-6/℃,which could be adapted to anenvironment with a high operating temperature range.
关键词
谐振式压力传感器/温度漂移/温度灵敏度漂移/温度补偿Key words
resonant pressure sensor/temperature drift/sensitivity temperature drift/temperature compensa-tion引用本文复制引用
基金项目
国家重点研发计划(2022YFB3206504)
出版年
2024
NETL
NSTL
万方数据