首页|C波段横向激励薄膜体声波谐振器设计与制备

C波段横向激励薄膜体声波谐振器设计与制备

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针对未来移动通信对射频前端器件提出的多频率、高集成新要求,开展了兼具声表面波(SAW)谐振器和薄膜体声波谐振器(FBAR)技术特点的新型横向激励兰姆波谐振器研究.该文介绍了基于c轴择优取向氮化铝(AlN)压电薄膜的C波段横向激励薄膜体声波谐振器(XBAR)的结构设计、参数优化和制备方法,并进行了工艺验证.通过剥离和刻蚀等步骤制备了谐振频率4.464 GHz、品质因数3 039、品质因数与频率之积(f×Q)达到1.56×1013 GHz、面积小于0.12 mm2 的低杂波XBAR谐振器,并仿真分析了其用于射频滤波器的可行性.该研究为进一步研制多频率、高集成的小型化XBAR滤波器组件提供了有效的设计技术和工艺技术支撑.
Design and Fabrication of C-Band Laterally Excited Bulk Acoustic Resonator
Considering the new requirements for multiple frequencies and high integration in RF front-end devices for future mobile communication,this study examines a novel laterally excited Lamb wave resonator that exhibits both SAW and FBAR technical characteristics.The structure design,parameter optimization,and preparation meth-od for a C-band laterally excited bulk acoustic resonator(XBAR)based on a c-axis optimally oriented aluminum ni-tride piezoelectric film are proposed,and the process is validated.Two XBAR samples with spurious mitigation were fabricated using lift-off and ICP-RIE,achieving a resonant frequency of 4.464 GHz,a quality factor of 3 039,and an f×Q product of 1.56×1013 GHz in a footprint smaller than 0.12 mm2.The application potential of the prepared resonators in an RF filter was simulated and analyzed.This study provides an effective design and process technology support for the further development of multi-frequency and highly integrated miniaturized filter modules.

piezoelectric micro-electro-mechanical systems deviceC-band radio-frequency filterlaterally excit-ed bulk acoustic resonatormulti-frequencyhigh-integration

吴高米、马晋毅、李尚志、司美菊、唐小龙、蒋世义、江洪敏、张祖伟

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中国电子科技集团公司 第二十四研究所,模拟集成电路国家级重点实验室,重庆 401332

中电科芯片技术(集团)有限公司,重庆 401332

国知创芯(重庆)科技有限公司,重庆 401332

压电微机电系统(MEMS)器件 C波段射频滤波器 横向激励薄膜体声波谐振器(XBAR) 多频率 高集成

重庆市博士后科学基金

CSTB2023NSCQ-BHX0030

2024

10.11977/j.issn.1004-2474.2024.03.001

压电与声光
四川压电与声光技术研究所

压电与声光

CSTPCD北大核心
影响因子：0.357
ISSN：1004-2474
年,卷(期)：2024.46(3)
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