首页|基于X-LiNbO3/SiO2/Si低温漂、大机电耦合SH-SAW谐振器的设计

基于X-LiNbO3/SiO2/Si低温漂、大机电耦合SH-SAW谐振器的设计

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铌酸锂(LN)单晶薄膜具有较高的机电耦合系数(k2eff>30%),其水平剪切(SH)声学模式常被应用于开发具有大机电耦合系数的薄膜声学谐振器和超宽带滤波器.但LN的频率温度系数较大(TCF>-50×10-6/℃),这不仅会降低滤波器的可用有效带宽,同时也会限制器件的功率处理能力.采用3D周期有限元模型对基于X切LN/SiO2/Si结构SH声表面波(SH-SAW)谐振器进行了优化研究.研究结果表明,当SH-SAW传播角ψ=-10°~-20°、LN和SiO2 膜厚分别为hLN=0.1λ和hSiO2=0.2λ(λ为叉指换能器周期)、铝电极金属化率η=0.4、电极相对厚度hAl/λ=5%~10%时,SH-SAW谐振器的 k2eff约为30%,且其TCF<-20×10-6/℃,有望用于开发新一代的低温漂、超宽带5G SAW滤波器.
Design of Low Drift,Large Electromechanical Coupling SH-SAW Resonators Based on X-Cut LiNbO3/SiO2/Si
Owing to its high electromechanical coupling coefficient(k2eff>30% ),the horizontal shear(SH)a-coustic modes in lithium niobate(LN)single-crystal films are typically investigated to develop thin-film acoustic re-sonators with large electromechanical coupling and ultra-wideband acoustic filters.However,its temperature coeffi-cient of frequency(TCF)is extremely high(>-50×10-6/℃).A high TCF not only reduces the effective band-width but also limits the power-management capability of the filters.Herein,we present an investigation into the optimization design of a low drift,large electromechanical coupling horizontal-shear surface acoustic wave(SH-SAW)resonator based on the X-cut LN/SiO2/Si structure using a three-dimensional periodic finite-element model.Simulation results show that when the SH-SAW propagation angle ψ is between-10° and-20°,the film thicknes-ses of LN and SiO2 are 0.1λ and 0.2λ(where λ is the period of the interdigital transducer)respectively,the metalli-zation rate of the aluminum electrode(η)is 0.4,the relative thickness of the electrode is between 5% and 10%,the k2eff of the SH-SAW resonator remains at~30%,and the TCF is less than-20×10-6/℃.Hence,the resonator is suitable for developing the next generation of low-temperature drift,ultra-wideband 5G SAW filters.

X-cut lithium niobateSH-SAWeffective electromechanical coupling coefficienttemperature

温福军、王园园、钱莉荣、王荔田、李翠平、熊阳、田亚会、李红浪

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天津理工大学 集成电路科学与工程学院,薄膜电子与通信器件天津市重点实验室,天津 300384

天津理工大学 光电器件与通信技术教育部工程研究中心,天津 300384

中国科学院声学研究所,北京 100190

国家纳米科学中心,北京 100190

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X切铌酸锂薄膜 水平剪切声表面波 有效机电耦合系数 频率温度系数 声表面波谐振器 超宽带声表面波滤波器

国家重点研发计划广东省重点研发计划广州市重点研发计划天津市技术创新引导专项(基金)企业科技特派员项目北京市科技新星计划中国科学院青年创新促进会项目

2022YFB36067022023B010119000220220607000123YDTPJC00600202204841722022024

2024

压电与声光
四川压电与声光技术研究所

压电与声光

CSTPCD北大核心
影响因子:0.357
ISSN:1004-2474
年,卷(期):2024.46(3)
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