The Study of Based on Back Cavity Etching and Lateral Exciting Film Bulk Acoustic Resonator
With rapid development in mobile technology,film bulk acoustic resonators have developed in a high frequency and wide bandwidth direction.This study focuses on the technological process of back cavity etching and a lateral exciting film bulk acoustic resonator on the POI(LiNbO3/SiO2/Si).On the study of the IDT optical lithogra-phy,etching and back cavity corrosion,the critical process parameters are determined.The frequency response curve shows that resonance and antiresonance frequencies were 4 565 and 5 035 MHz,respectively.The effective electro-mechanical coupling coefficient was 20.86%,which is significant for research on high frequency and wide bandwidth film bulk acoustic resonators.
NETL
NSTL
万方数据
