背腔刻蚀型横向激励薄膜体声波谐振器制备技术研究
The Study of Based on Back Cavity Etching and Lateral Exciting Film Bulk Acoustic Resonator
徐阳 1司美菊 1吴高米 2刘文怡 1巩乐乐 2甄静怡 1余奇 2陈金琳1
作者信息
- 1. 中国电子科技集团公司第二十六研究所,重庆 400060;国知创芯(重庆)科技有限公司,重庆 401332
- 2. 国知创芯(重庆)科技有限公司,重庆 401332;中电科芯片技术(集团)有限公司,重庆 401332
- 折叠
摘要
随着移动通信技术的快速发展,薄膜体声波滤波器逐渐向高频和大带宽方向发展.该文研究了POI(LiNbO3/SiO2/Si)基片上背腔刻蚀型横向激励薄膜体声波谐振器制作工艺,通过研究POI基IDT光刻、背腔硅刻蚀等工艺,确定了IDT层曝光量和背腔刻蚀等关键工艺参数.研制出的背腔刻蚀型横向激励薄膜体声波谐振器,其谐振频率为4 565 MHz,反谐振频率为5 035 MHz,机电耦合系数为20.86%.此制备工艺对研究高频、大带宽薄膜体声波滤波器具有重要的参考意义.
Abstract
With rapid development in mobile technology,film bulk acoustic resonators have developed in a high frequency and wide bandwidth direction.This study focuses on the technological process of back cavity etching and a lateral exciting film bulk acoustic resonator on the POI(LiNbO3/SiO2/Si).On the study of the IDT optical lithogra-phy,etching and back cavity corrosion,the critical process parameters are determined.The frequency response curve shows that resonance and antiresonance frequencies were 4 565 and 5 035 MHz,respectively.The effective electro-mechanical coupling coefficient was 20.86%,which is significant for research on high frequency and wide bandwidth film bulk acoustic resonators.
关键词
干法刻蚀/刻蚀速率/横向激励/机电耦合系数/薄膜体声波谐振器Key words
dry etch/etch rate/lateral exciting/electromechanical coupling coefficient/film bulk acoustic re-sonator引用本文复制引用
出版年
2024
NETL
NSTL
万方数据