金锡键合在薄膜体声波滤波器晶圆级封装中的研究
Research on Au-Sn Bonding for Wafer-Level Packaging of FBAR Filters
金中 1张基钦 2吕峻豪 1阮文彪 2刘娅 1甑静怡 1孙明宝 1孙彦红1
作者信息
- 1. 中电科芯片技术(集团)有限公司,重庆 400060
- 2. 厦门云天半导体科技有限公司,福建 厦门 361026
- 折叠
摘要
薄膜体声波滤波器(FBAR)作为一种无源、体积小和耐功率高的器件,被广泛应用于射频信号处理中.晶圆级气密封装作为小型化封装的代表,在各种高可靠性应用场景中占据重要地位.金-金键合和金-锡键合被广泛应用于薄膜体声波滤波器的气密性晶圆级封装中,但金-锡键合在工艺上更易实现.该文针对金-锡键合在气密性晶圆级封装中的应用进行了研究,在保证键合强度的情况下制作了3 GHz滤波器样品,其性能测试一致性良好,可靠性达到要求.
Abstract
As a passive,small-sized,and high-power-tolerant device,the film bulk acoustic resonator(FBAR)has been widely used in radio frequency signal processing.Wafer-level hermetic packaging represents miniaturized packaging and plays a critical role in various high-reliability applications.Both gold-gold and gold-tin bonding are widely used in FBAR hermetic wafer-level packaging.However,gold-tin bonding has a more straight forward imple-mentation process.Therefore,this study investigates the application of gold-tin bonding in hermetic wafer-level packaging.Under the condition of ensuring bonding strength,3 GHz filter samples were produced.The experimental results demonstrated identical perfomances with all samples passing the reliability tests.
关键词
薄膜体声波滤波器/晶圆级封装/金锡键合Key words
FBAR filter/wafer level package/Au-Sn bonding引用本文复制引用
出版年
2024
NETL
NSTL
万方数据