具有片上电感的改进型梯形声表面波滤波器
Improved Trapezoidal SAW Filter with On-Chip Inductance
杨茂坤 1帅垚 2魏子杰 2吴传贵 2罗文博 2张万里2
作者信息
- 1. 重庆邮电大学 光电工程学院,重庆 400065;电子科技大学 重庆微电子产业技术研究院,重庆 401332
- 2. 电子科技大学 重庆微电子产业技术研究院,重庆 401332;电子科技大学 电子科学与工程学院,四川 成都 611731
- 折叠
摘要
针对小体积声表面波(SAW)滤波器性能受封装影响较大的问题,提出了一种新型SAW梯形滤波器电路拓扑结构.通过分析滤波器高频受封装影响造成的远端抑制上翘的现象,从电路结构出发,改变版图设计,实现了片上电感.采用传统梯形滤波器结构和利用纵向耦合双模谐振器型滤波器(DMS)特殊接地结构相结合的电路拓扑结构,有助于提高带外抑制和设计灵活性.在标准的42°Y-X钽酸锂(LiTaO3)基板上制作滤波器,通过仿真分析得到中心频率2 580 MHz、带宽50 MHz、插入损耗小于2.5 dB的高阶梯形射频SAW滤波器的最优拓扑结构.测试结果表明,通过改变电路拓扑结构关键参数和引入新的传输零点,可改善在高频段内的带外抑制特性.
Abstract
The performance of small-volume surface acoustic wave(SAW)filters is significantly affected by packaging.To solve this problem,a new SAW trapezoidal filter circuit topology is proposed.By analyzing the phe-nomenon of the upturn of the remote rejection caused by the packaging of the filter at high frequency,the layout de-sign is changed from the circuit structure to realize the on-chip inductance.The circuit topology that combines the conventional trapezoidal filter structure with the special grounding structure of the longitudinally coupled dual-mode resonator type filter(DMS)contributes to out-of-band rejection and design flexibility.The optimal topology of the high-order RF SAW filter with a center frequency of 2 580 MHz,bandwidth of 50 MHz,and an insertion loss of less than 2.5 dB is obtained via simulation analysis on a standard 42°Y-X lithium tantalate(LiTaO3)substrate.
关键词
封装/声表面波(SAW)滤波器/片上电感/DMS结构/传输零点/带外抑制Key words
package/surface acoustic wave(SAW)filter/on-chip inductance/dual-mode resonator type filter(DMS)structure/transmission zero/out-of-band inhibition引用本文复制引用
基金项目
四川省科技计划基金资助项目(2020YFJ0002)
出版年
2024
NETL
NSTL
万方数据