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具有片上电感的改进型梯形声表面波滤波器

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针对小体积声表面波(SAW)滤波器性能受封装影响较大的问题,提出了一种新型SAW梯形滤波器电路拓扑结构.通过分析滤波器高频受封装影响造成的远端抑制上翘的现象,从电路结构出发,改变版图设计,实现了片上电感.采用传统梯形滤波器结构和利用纵向耦合双模谐振器型滤波器(DMS)特殊接地结构相结合的电路拓扑结构,有助于提高带外抑制和设计灵活性.在标准的42°Y-X钽酸锂(LiTaO3)基板上制作滤波器,通过仿真分析得到中心频率2 580 MHz、带宽50 MHz、插入损耗小于2.5 dB的高阶梯形射频SAW滤波器的最优拓扑结构.测试结果表明,通过改变电路拓扑结构关键参数和引入新的传输零点,可改善在高频段内的带外抑制特性.
Improved Trapezoidal SAW Filter with On-Chip Inductance
The performance of small-volume surface acoustic wave(SAW)filters is significantly affected by packaging.To solve this problem,a new SAW trapezoidal filter circuit topology is proposed.By analyzing the phe-nomenon of the upturn of the remote rejection caused by the packaging of the filter at high frequency,the layout de-sign is changed from the circuit structure to realize the on-chip inductance.The circuit topology that combines the conventional trapezoidal filter structure with the special grounding structure of the longitudinally coupled dual-mode resonator type filter(DMS)contributes to out-of-band rejection and design flexibility.The optimal topology of the high-order RF SAW filter with a center frequency of 2 580 MHz,bandwidth of 50 MHz,and an insertion loss of less than 2.5 dB is obtained via simulation analysis on a standard 42°Y-X lithium tantalate(LiTaO3)substrate.

packagesurface acoustic wave(SAW)filteron-chip inductancedual-mode resonator type filter(DMS)structuretransmission zeroout-of-band inhibition

杨茂坤、帅垚、魏子杰、吴传贵、罗文博、张万里

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重庆邮电大学 光电工程学院,重庆 400065

电子科技大学 重庆微电子产业技术研究院,重庆 401332

电子科技大学 电子科学与工程学院,四川 成都 611731

封装 声表面波(SAW)滤波器 片上电感 DMS结构 传输零点 带外抑制

四川省科技计划基金资助项目

2020YFJ0002

2024

压电与声光
四川压电与声光技术研究所

压电与声光

CSTPCD北大核心
影响因子:0.357
ISSN:1004-2474
年,卷(期):2024.46(4)