首页|A High-Performance MoS2-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles
A High-Performance MoS2-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles
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Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications.It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS2 devices.Defect engineering,such as introducing vacancies,can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed.Herein,we propose a nickel nanoparticle-induced gateless photogating effect with a unique energy band structure to enable the application of defect engineering and achieve high optoelectronic performance.The device based on Ni nanoparticle-decorated MoS2 with S vacancies exhibited high responsivities of 106.21 and 1.38 A W-1 and detectivities of 1.9 × 1012 and 8.9 × 109 Jones under 532 and 980 nm illumination(visible to near infrared),respectively,with highly accelerated response speed.This strategy provides new insight into optimizing defect engineering to design high-performance optoelectronic devices capable of broadband photodetection.
Ran Duan、Weihong Qi、Panke Li、Kewei Tang、Guoliang Ru、Weimin Liu
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State Key Laboratory of Solidification Processing,Center of Advanced Lubrication and Seal Materials,Northwestern Polytechnical University,Xi'an 710072,China
Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing,Yantai 265503,China
State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences,Lanzhou 730000,China
National Natural Science Foundation of ChinaOpen Project of Basic Research of Shandong Laboratory of Yantai Advanced Materials and Green ManufacturingFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities
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