氧化锌锡薄膜晶体管的制备与性能研究
Performances and preparation of zinc-tin oxide thin-film transistors
初学峰 1胡小军 1张祺 1黄林茂 1谢意含1
作者信息
- 1. 吉林建筑大学 寒地建筑综合节能教育部重点实验室,吉林 长春 130118;吉林建筑大学 电气与计算机学院,吉林 长春 130118
- 折叠
摘要
为了提高薄膜晶体管的性能,本文基于射频磁控溅射技术,采用氧化锌锡(ZTO)材料作为沟道层,在SiO2/p-Si衬底上制备高性能ZTO薄膜晶体管.采用AFM、XRD、UV-Vis研究了溅射功率对ZTO薄膜的表面形貌和光学性能的影响.使用半导体参数仪对ZTO薄膜晶体管进行电学性能的测试,利用XPS分析研究溅射功率对ZTO薄膜中元素组成和价态的影响,探索高性能薄膜晶体管的原理机制.实验结果表明,所有ZTO薄膜样品是非晶结构,表面致密,透光率均大于90%.适当增加溅射功率能够改善ZTO薄膜晶体管的电学性能.在90 W溅射功率下制备的薄膜晶体管综合性能较好,其饱和迁移率达到了 15.61 cm2/(V·s),亚阈值摆幅为 0.30 V/decade,阈值电压为-5.06 V,电流开关比为8.92×109.
Abstract
In order to improve the performance of thin film transistors(TFT),the high-performance ZTO thin film transistors is prepared on SiO2/p-Si substrates based on radio frequency magnetron sputtering technology,using zinc tin oxide(ZTO)material as the channel layer.The effects of sputtering power on the surface morphology and optical properties of ZTO thin films were studied using AFM,XRD,and UV-Vis.The electrical performance of ZTO thin film transistors is tested using a Semiconductor Device Analyser.XPS analysis is used to study the influence of sputtering power on the elemental composition and valence states in ZTO thin films,and to explore the principle and mechanism of high-performance thin film transistors.The results show that all ZTO thin film samples have an amorphous structure,dense surface,and transmittance greater than 90%.The electrical performance of ZTO thin film transistors can be improved by increasing the sputtering power appropriately.The thin film transistor prepared at 90 W sputtering power has the good comprehensive performance,with saturation mobility of 15.61 cm2/(V·s),subthreshold swing of 0.30 V/decade,threshold voltage of-5.06 V,and current switching ratio of 8.92×109.
关键词
薄膜晶体管/溅射功率/XPS分析/ZTO薄膜Key words
thin-film transistor/sputtering power/XPS analysis/ZTO thin film引用本文复制引用
基金项目
吉林省科技发展计划(20220201068GX)
出版年
2024
国家科技期刊平台
NSTL
维普
万方数据