Research progress of high mobility metal oxide semiconductor thin film transistors
Thin-film transistor(TFT)based on metal oxide semiconductor(MOS)has become a key technology to boost the development of the flat panel display or flexible display industry due to their high field-effect mobility(μFE),extremely low cut-off leakage current and good large-area electrical uniformity.After more than 30 years of research,amorphous indium gallium zinc oxide(a-IGZO)is the first to be popularized in TFT by replacing the amorphous silicon(a-Si).However,in order to simultaneously meet the multiple upgrade requirements of the display industry for higher productivity,better display performance(such as high resolution,high refresh rate,etc.)and lower power consumption,MOS TFTs technology with higher mobility is required.From the perspective of solid-state physics,this paper reviews the research progress of MOS TFTs to achieve high mobility characteristics through multi-component MOS materials,and discusses the relationship between mobility and device stability.Finally,the status quo and development trend of MOS TFTs are summarized and prospected.
metal oxide semiconductorthin-film transistorfield-effect mobilitybias stability
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