Research on Resistive Switching Properties of Ag2Se Thin Film-MnO Nanoparticles Self-assembled Thin Film
Monodisperse manganese oxide nanoparticles with particle size of about 30 nm were chemically synthesized via thermal decomposition.A close-packed nanoparticle monolayer was formed on a Pt bottom electrode via dip-coating and annealing.As2Se/MnO heterostructures with a Ti top electrode and a Pt bottom electrode were fabricated.The Ti/Ag2Se/MnO/Pt devices presented stable bipolar resistive switching behav-iors,with low voltage operation and good endurance and retention properties.It proves the potential application of Ti/Ag2Se/MnO/Pt devices for non-volatile resistive switching memory devices.
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维普
