Analysis of Boron and Carbon Introduction in Silicon Poly-crystalline Base Phosphorus Test
Silicon Poly-crystals,as raw materials of ultra-high purity semiconductors,whether solar or electronic,needs to be detected and an-alyzed according to the standard,and then the impurity content can be used to determine the grade and the subsequent use.Because of the differ-ent grain orientations,the electrical parameters of poly-crystalline silicon can,t accurately reflect the inherent quality of the product.After tes-ting the conductivity,resistivity and minority carrier life of silicon single crystal,the donor impurity,acceptor impurity,substitution carbon and interstitial oxygen were measured by spectral method.Sampling,pickling and drawing are needed in the process of transforming polysilicon into monocrystalline,and the sections of silicon wafers need to be sliced,plate preparation requires slicing,grinding and polishing of silicon wafer sec-tions.In this paper,the sources of boron and carbon impurities in the preparation process are analyzed,and the possible factors are analyzed.
Silicon Poly-crystalsSample CorePicklingDrawingSilicon Single CrystalBoron ImpurityCarbon ImpurityAnalysis
万方数据
维普
