耐等离子体刻蚀涂层材料与制备工艺研究进展
Research Progress on Plasma Etching Resistant Coating Materials and Preparation Techniques
马凯 1田飞 1李长久 1李成新1
作者信息
- 1. 西安交通大学材料科学与工程学院,金属材料强度国家重点实验室,西安 710049
- 折叠
摘要
随着半导体器件集成度的提升及先进制程的不断发展,半导体制造刻蚀工艺面临更高要求.刻蚀机内壁受高密度等离子体轰击,可能释放颗粒污染物,引发工艺漂移,严重时甚至导致电流短路和生产良率的下降.在刻蚀机内壁表面制备陶瓷涂层,可有效减缓等离子体对器件表面的刻蚀,并最大程度减少颗粒物的生成.合理选择涂层材料体系和制备工艺,可以显著提高刻蚀机部件的等离子体耐受性,并延长其使用寿命.总结了耐等离子体刻蚀涂层的研究现状,分析了等离子体刻蚀条件与涂层刻蚀行为之间的关系,综述了包括Al2O3、Y2O3、YAG、YF3、YOF、非晶玻璃等在内的多种耐刻蚀材料的研究进展.同时,还探讨了涂层制备工艺的特点及其微观结构对刻蚀性能的影响,并对未来耐等离子体刻蚀涂层的要求及材料选择进行了展望.
Abstract
With the increasing integration density of semiconductor devices and the ongoing development of advanced manufacturing processes,higher demands have been placed on semiconductor etching processes.The inner walls of etch chambers,when exposed to high-density plasma bombardment,may release particulate contaminants,causing process shift.In severe cases,the resultant contaminants may result in current short circuit and a decline in production yield.The application of plasma etching resistant coatings on the inner surfaces of etching chambers has proven effective in reducing plasma-induced corrosion and minimizing particulate contamination.The proper selection of coating material and preparation techniques can markedly enhance the plasma resistance of etching chamber components and extend their service lifespan.This article summarized the current research on plasma etching resistant coatings,examining the relationship between plasma etching conditions and the erosion behavior of coatings.It reviewed the research progress on various materials,including Al2O3,Y2O3,YAG,YF3,YOF and amorphous glass.Additionally,the characteristics of coating preparation techniques and the influence of microstructure on plasma etching performance were explored.Finally,the requirements and selection criteria for plasma etching resistant coatings were discussed.
关键词
等离子体刻蚀/耐刻蚀涂层/等离子喷涂/真空冷喷涂Key words
plasma etching/etching resistant coating/plasma spraying/vacuum cold spraying引用本文复制引用
出版年
2024
NETL
NSTL
万方数据