Research Progress on Plasma Etching Resistant Coating Materials and Preparation Techniques
With the increasing integration density of semiconductor devices and the ongoing development of advanced manufacturing processes,higher demands have been placed on semiconductor etching processes.The inner walls of etch chambers,when exposed to high-density plasma bombardment,may release particulate contaminants,causing process shift.In severe cases,the resultant contaminants may result in current short circuit and a decline in production yield.The application of plasma etching resistant coatings on the inner surfaces of etching chambers has proven effective in reducing plasma-induced corrosion and minimizing particulate contamination.The proper selection of coating material and preparation techniques can markedly enhance the plasma resistance of etching chamber components and extend their service lifespan.This article summarized the current research on plasma etching resistant coatings,examining the relationship between plasma etching conditions and the erosion behavior of coatings.It reviewed the research progress on various materials,including Al2O3,Y2O3,YAG,YF3,YOF and amorphous glass.Additionally,the characteristics of coating preparation techniques and the influence of microstructure on plasma etching performance were explored.Finally,the requirements and selection criteria for plasma etching resistant coatings were discussed.
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