Determination of Silicon in Tantalum Alloy by Microwave Digestion with ICP-AES
The accurate detection of impurity silicon in tantalum alloy is of great significance to the quality control of tantalum alloy.The speed of dissolving tantalum alloy by traditional water bath method is too slow,and the detection efficiency is low,which is not conducive to guiding production.In this work,tantalum alloy was treated with nitric acid and hydrofluoric acid by microwave diges-tion,and silicon was detected by inductively coupled plasma atomic emission spectrometry(ICP-AES).A method for the determina-tion of silicon in tantalum alloy by microwave digestion inductively coupled plasma atomic emission spectrometry(ICP-AES)was established.The experiment first optimized the microwave digestion conditions of tantalum alloy samples;then investigated the ef-fect of hydrofluoric acid and nitric acid dosage on the digestion efficiency of tantalum alloy samples,and optimized the dosage by adding 4 mL of hydrofluoric acid,3 mL of nitric acid;The analysis spectral line of silicon was optimized,and 251.612 nm was se-lected as the analysis spectral line;Under optimized conditions,tantalum alloy standard samples and general samples were tested.Among them,the calibration curve has good linearity,with a correlation coefficient of 0.999 9;According to the experimental method,silicon in tantalum alloy standard materials was detected,and the detection results were consistent with the recognized val-ues.The relative standard deviation(RSD,n=3)of the measurement results was between 2.3% and 3.5%,indicating that the method has good accuracy and precision;According to the experimental method,tantalum alloy samples were measured,and the re-covery(n=3)of the measurement results was between 93.3% and 105.0%,indicating that this method can be used for the rapid and accurate analysis of silicon in actual tantalum alloy samples.
NETL
NSTL
万方数据
