紫外超短脉冲激光硅表面微槽刻蚀研究
Research on the UV Laser Etching with Ultrashort Pulse Laser on the Surface of Silicon Materials
陈海鹏 1王浩 2欧阳文泰3
作者信息
- 1. 上海市激光技术研究所有限公司,上海 200233
- 2. 上海市激光技术研究所有限公司,上海 200233;上海激光智能制造工程技术研究中心,上海 200233
- 3. 中国科学院宁波材料技术与工程研究所,浙江宁波 315201
- 折叠
摘要
硅基微流控板已经被广泛应用于微流控领域,超短脉冲激光技术提供了一种灵活、精确的硅表面微槽制造方法.为降低激光作用过程中对硅材料的热影响,使用脉冲宽度为12 ps的紫外超短脉冲激光进行刻蚀,分析不同激光功率和激光扫描次数等激光刻蚀参数对微槽的影响.在激光共聚焦显微镜的帮助下,研究不同激光参数对微槽深度变化以及微槽底部粗糙度的影响,结果显示增加激光功率和激光扫描次数能有效提升微槽深度,并且也会增加微槽底部的粗糙度.
Abstract
Silicon-based materials have been used in electronic microfluidic devices.The heat dissipation effect has become an important index to evaluate their performance,so different process methods have been applied to the patterning processing of silicon-based materials to enhance the heat dissipation performance.The laser etching was used to machine microgrooves on the surface of Si samples in this research.To reduce the thermal influence of laser processing on silicon materials,the ultrashort pulse laser with a pulse width of 12 ps was used to process microgrooves,during which the influence of laser processing param-eters such as different laser power and laser scanning times on microgrooves was analyzed.With the help of laser confocal mi-croscopy,the effects of different laser parameters on the depth and roughness of the bottom of the microgroove were studied.The results showed that increasing the laser power and the number of laser scans could effectively increase the depth and rough-ness of microgroove.
关键词
超短脉冲激光/激光刻蚀/微槽/硅片Key words
ultrashort pulse laser/laser etching/microgroove/Si sample引用本文复制引用
基金项目
上海市中央引导地方科技发展专项(YDZX20223100002001)
出版年
2024
NETL
NSTL
万方数据