首页|Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter

Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter

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This paper theoretically studies the axisymmetric frictionless indentation of a transversely isotropic piezoelectric semiconductor(PSC)half-space subject to a rigid flat-ended cylindrical indenter.The contact area and other surface of the PSC half-space are assumed to be electrically insulating.By the Hankel integral transformation,the problem is reduced to the Fredholm integral equation of the second kind.This equation is solved numerically to obtain the indentation behaviors of the PSC half-space,mainly including the indentation force-depth relation and the electric potential-depth relation.The results show that the effect of the semiconductor property on the indentation responses is limited within a certain range of variation of the steady carrier concentration.The dependence of indentation behavior on material properties is also analyzed by two different kinds of PSCs.Finite element simulations are conducted to verify the results calculated by the integral equation technique,and good agreement is demonstrated.

piezoelectric semiconductor(PSC)insulating indenterelectromechanical responsesingular integral equationfinite element simulation

Shijing GAO、Lele ZHANG、Jinxi LIU、Guoquan NIE、Weiqiu CHEN

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State Key Laboratory of Mechanical Behavior and System Safety of Traffic Engineering Structures,Shijiazhuang Tiedao University,Shijiazhuang 050043,China

School of Mechanical Engineering,Shijiazhuang Tiedao University,Shijiazhuang 050043,China

Hebei Key Laboratory for Mechanics of Intelligent Materials and Structures,Department of Engineering Mechanics,Shijiazhuang Tiedao University,Shijiazhuang 050043,China

State Key Laboratory of Computer Aided Design and Computer Graphics,Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province,Department of Engineering Mechanics,Zhejiang University,Hangzhou 310027,China

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国家自然科学基金国家自然科学基金国家自然科学基金河北省自然科学基金河北省科技计划

12072209U21A2043012192211A2020210009225676162GH

2024

应用数学和力学(英文版)
上海大学

应用数学和力学(英文版)

影响因子:0.294
ISSN:0253-4827
年,卷(期):2024.45(4)
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