应用数学和力学2024,Vol.45Issue(10) :1300-1312.DOI:10.21656/1000-0887.450200

考虑表面效应的压电半导体梁的静态屈曲行为研究

Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects

詹春晓 李孝宝 王美芹
应用数学和力学2024,Vol.45Issue(10) :1300-1312.DOI:10.21656/1000-0887.450200

考虑表面效应的压电半导体梁的静态屈曲行为研究

Static Buckling Behaviors of Piezoelectric Semiconductor Beams With Steigmann-Ogden Surface Effects

詹春晓 1李孝宝 1王美芹1
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作者信息

  • 1. 合肥工业大学 土木与水利工程学院,合肥 230009
  • 折叠

摘要

鉴于表面效应和挠曲电效应对纳米材料或结构的力学行为具有显著影响,以纳米尺度压电半导体(PS)梁为研究对象,根据Hamilton变分原理,推导建立了考虑Steigmann-Ogden表面弹性效应和挠曲电效应的Euler-Ber-noulli梁理论模型和相应的边界条件.结合电荷守恒方程和线性漂移扩散方程,研究了该梁结构的静态屈曲行为,得到了短路和开路条件下梁结构的等效弹性常数和屈曲临界压力的解析解.详细分析了表面效应、尺寸效应、挠曲电效应以及载流子屏蔽效应等因素对梁结构的等效弹性常数的影响规律和作用机制.该文的研究结果对基于纳米压电半导体梁结构电子器件的设计和应用具有指导作用.

Abstract

The surface elastic and flexoelectric effects significantly influence the mechanical behaviors of nanoscale materials and structures.The static buckling behaviors of piezoelectric semiconductor(PS)beams were studied through the establishment of an Euler-Bernoulli beam theoretical model in view of the Steigmann-Ogden surface elasticity and flexoelectricity.The governing equations and associated boundary conditions were derived under the Hamiltonian variational principle.In combination with the conservation equations for electro-statics and linear drift-diffusion equations,the analytical solutions of the effective elastic constants and critical buckling loads were obtained under both short and open circuit conditions.Numerical calculations were carried out to explore the effective elastic behaviors of the nanoscale PS beam under the effects of flexoelectricity,sur-face elasticity and shielding of charge carriers.This work provides a valuable guidance for designing high-per-formance electronic devices with piezoelectric semiconductor beams.

关键词

压电半导体梁/屈曲/表面效应/挠曲电效应

Key words

piezoelectric semiconductor beam/buckling/surface effect/flexoelectric effect

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基金项目

安徽省自然科学基金(2208085MA17)

出版年

2024
应用数学和力学
重庆交通学院

应用数学和力学

CSTPCDCSCD北大核心
影响因子:0.778
ISSN:1000-0887
参考文献量56
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