The ferroelectric tunneling junction,with a metal-ferroelectric ultra-thin film-metal structure,has different tunneling resistance states through polarization manipulation,leading to potential applications in next-generation information storage devices with low-power consumption,fast reading/writing speed,high storage density,and non-volatility.However,the ferroelectric thin films still experience high-temperature rises with re-duced stability due to high driving fields,and reducing the driving electric field is crucial for designing ferroe-lectric tunneling devices.The ferroelectric thin films with coexisting domains have lowered barriers and de-creased driving electric fields for domain switching,which are achieved through substrate manipulation.Herein the substrate effects on the driving field,the tunneling resistance switching ratio and the tunneling properties,were studied based on the WKB approximation combined with the Landau phenomenological theory.The results show that,the ferroelectric tunnel junction with coexisting domains exhibits 3 resistive states corresponding to out-of-plane and in-plane polarizations.The effective driving electric field can be reduced to 25 MV/m,which is 76%lower than that with 2 resistive single domains.The proposed theoretical framework provides a fundamen-tal understanding of the formation of multi-state and reduction of the driving field for low-energy,multi-resist-ance ferroelectric storage devices.
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