首页|工艺参数对高温高压合成Ⅱa型培育钻石的影响

工艺参数对高温高压合成Ⅱa型培育钻石的影响

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针对国内采用六面顶压机利用高温高压法合成Ⅱa型培育钻石存在成核晶种粒数少、优晶占比小、生长缺陷多等问题,对合成前期和合成结束后的工艺参数曲线进行了优化。通过调控合成腔体内部的压力和温度,使其在合成腔体中的生长环境稳定,从而提高晶种形核生长数和优晶率。结果表明,最优工艺方案为:培育钻石生长阶段的前20 h,在低温高压环境下缓慢升温并采取一段时间的保温措施,然后恒功率升温至设定温度,在高温高压下生长3d;在合成结束的2h内,采取分阶段带加热功率低速卸压,能够有效控制裂纹、金属包裹体等缺陷的产生,提高合成晶体品质。最终晶种形核生长数为25颗,优晶占比为92%。
Effect of Technological Parameters on Synthesis ofⅡa Type Synthetic Diamonds by HPHT
In response to the issues of low nucleation crystal sead,a small proportion of high-quality crystals,and numerous growth defects in the synthesis of type II a diamonds formed by a cubic press at high temperature and high pressure in China,this paper optimized the process parameter curves before and after the crystal synthesis.The results show that the optimal process plan is as follows.In the first 20 h of the growth stage,the diamond is slowly heated under low temperature and high pressure environment and taken insulation measures for a period of time.Then the constant power is heated to the set temperature,where the diamond grows for 3 days under high temperature and pressure.Within 2 h after the synthesis,the low-speed pressure relief with heating power in phases is adopted,which effectively controls the defects such as cracks and metal inclusions and improves the quality of synthetic crystals.The final number of seed nucleation is 25,and the proportion of excellent crystals is 92%.

high temperature and high pressuretype Ⅱa synthetic diamondsynthesis stagenumber of nucleated granulesoptimal crystal ratecrackmetal inclusion

兰昊天、李仁德、刘文俊、余海洲、范祖华、刘威、周念

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三峡大学材料与化工学院,湖北宜昌 443002

中晶钻石有限公司,湖北宜昌 443100

高温高压 Ⅱa型培育钻石 合成阶段 晶种形核生长数 优晶率 裂纹 金属包裹体

2024

硬质合金
株洲硬质合金集团有限公司

硬质合金

CSTPCD
影响因子:0.754
ISSN:1003-7292
年,卷(期):2024.41(2)