首页|Cr2O3-Y2O3-MgO三元烧结助剂对99氧化铝陶瓷微波介电及绝缘性能的影响

Cr2O3-Y2O3-MgO三元烧结助剂对99氧化铝陶瓷微波介电及绝缘性能的影响

扫码查看
采用常压烧结,在1 480、1 500、1 530、1 550℃下制备了Cr2O3-Y2O3-MgO共掺的99氧化铝陶瓷,研究了不同含量的Cr2O3掺杂对99氧化铝陶瓷的致密化、微观结构、微波介电性能和绝缘性能的影响。结果发现:适量的Cr2O3、Y2O3和MgO会促进烧结,减少晶粒间的空隙,提升致密度,进而提升各项性能。当w(Cr2O3)=0。4%、w(Y2O3)=0。24%、w(MgO)=0。16%,烧结温度为1 530℃时,密度为3。919 cm3、介电常数εr为9。985、介电损耗tanδ值为0。000 5、击穿电压为25。3 kV。Cr2O3掺杂使得99氧化铝陶瓷微波介电和绝缘性能提升,在电子封装材料中有良好的应用前景。
Effect of Cr2O3-Y2O3-MgO Ternary Sintering Aids on Microwave Dielectric and Insulation Properties of 99%Alumina Ceramics
99%alumina ceramics doped with Cr2O3-Y2O3-MgO were prepared by pressureless sintering at temperatures of 1 480 ℃,1 500 ℃,1 530 ℃,and 1 550 ℃.The effects of varying doping amounts of Cr2O3 on the densification,microstructure,microwave dielectric properties,and insulation properties of the 99%alumina ceramics were studied.The results show that appropriate amounts of Cr2O3,Y2O3,and MgO can promote sintering,reduce intergranular voids,improve density,and enhance overall performance.Under the conditions of w(Cr2O3)=0.4%,w(Y2O3)=0.24%,w(MgO)=0.16%,and sintering temperature of 1 530℃,the ceramics exhibit a density of 3.919 cm3,a dielectric constant(εr)of 9.985,a dielectric loss(tanδ)of 0.000 5,and a breakdown voltage of 25.3 kV.The doping of Cr2O3 improves the microwave dielectric and insulation properties of the 99%alumina ceramics,showing promising potential in electronic packaging materials.

aluminachromium sesquioxidemicrowave dielectric propertiesinsulation properties

白云飞、陈德庆、李光、吴镇宏、银锐明、李鹏飞

展开 >

湖南工业大学材料与先进制造学院,湖南株洲,412000

江西氮化硅新材料有限公司,江西南城,344700

东莞创基资本,广东东莞,523000

湖南工业大学醴陵陶瓷学院,湖南醴陵,412299

展开 >

氧化铝 三氧化二铬 微波介电性能 绝缘性能

湖南省自然科学基金湖南省自然科学基金湖南省教育厅优秀青年项目

2023JJ501892023JJ5017723B0545

2024

硬质合金
株洲硬质合金集团有限公司

硬质合金

CSTPCD
影响因子:0.754
ISSN:1003-7292
年,卷(期):2024.41(4)