Temperature and Radiation Performance of 4H-SiC Detector
Schottky diodes are fabricated using 100 μm thick 4H-SiC epitaxial wafers with Ohmic and Schottky contacts,and packaged as SiC detectors to meet the requirements of high temperature and radiation environments.The current-voltage(I-V)curves are measured in the range of 25 to 150 ℃.The experimental results show that the leakage current changes very little when the temperature is less than or equal to 105 ℃.The change rate of leakage current is 0.33％/℃,when the reverse bias is-500 V and the temperature rises from 25 to 105 ℃.The SiC detector is irradiated by 60Co source in Peking University.The I-V characteristics of the SiC detector are compared before and after the irradiation experiment with total dose of 1 Mrad.The experimental data indicates that the leakage current has almost no significant change.
NETL
NSTL
万方数据
