摘要
针对极端环境下耐高温和耐辐照半导体探测器的研制需求,利用外延层厚度为100 μm的4H-SiC外延片通过欧姆接触和肖特基接触制备成肖特基二极管,封装成肖特基二极管探测器.在25 ℃～150 ℃的环境下,测量探测器的Ⅰ-Ⅴ特性曲线.结果表明,在温度≤105℃时,漏电流曲线变化较小.当偏置电压为-500 V时,温度从25 ℃上升至105 ℃,漏电流的变化率为0.33％/℃.利用北京大学化学系60Co放射源对探测器进行辐照,对比总剂量1Mrad的实验前、实验后的探测器Ⅰ-Ⅴ特性变化.结果表明,辐照前后探测器的漏电流无明显变化.
Abstract
Schottky diodes are fabricated using 100 μm thick 4H-SiC epitaxial wafers with Ohmic and Schottky contacts,and packaged as SiC detectors to meet the requirements of high temperature and radiation environments.The current-voltage(I-V)curves are measured in the range of 25 to 150 ℃.The experimental results show that the leakage current changes very little when the temperature is less than or equal to 105 ℃.The change rate of leakage current is 0.33％/℃,when the reverse bias is-500 V and the temperature rises from 25 to 105 ℃.The SiC detector is irradiated by 60Co source in Peking University.The I-V characteristics of the SiC detector are compared before and after the irradiation experiment with total dose of 1 Mrad.The experimental data indicates that the leakage current has almost no significant change.
基金项目
国家自然科学基金资助项目(11605009)
计量与校准技术国防科技重点实验室开放课题(JLKG2022001C003)
NETL
NSTL
万方数据