集成电路和功率器件抗辐射工艺加固技术研究综述
Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device
李博 1王磊 2刘凡宇 2陈思远 2陆江 2舒磊2
作者信息
- 1. 中国科学院微电子研究所,北京 100029;中国科学院大学,北京 100049;中国科学院抗辐照器件技术重点实验室,北京 100029
- 2. 中国科学院微电子研究所,北京 100029;中国科学院抗辐照器件技术重点实验室,北京 100029
- 折叠
摘要
随着我国空间装备的高速发展,尤其是深空探测器,微电子器件抗辐射性能得到广泛关注.抗辐射工艺加固是实现器件抗辐射性能提升的重要途径之一.本文围绕空间总剂量效应和单粒子效应,对近年来集成电路和功率器件辐射效应机理和工艺加固技术的研究进展进行了介绍和总结,为抗辐射工艺加固技术的发展与应用提供了有益参考.
Abstract
With the rapid development of aerospace equipment and utilization,especially deep space probes,the radiation hardening level of microelectronics has been widely concerned.Radiation hardening by process technology is one of important methods to improve radiation tolerance of spaceborne electronics.In this paper,the recent research progress on the radiation mechanisms and radiation hardening by process technology of integrated circuits and power devices are introduced and summarized,focusing on total ionizing dose effects and single event effects in space.These reviews can provide a useful reference for the development and applications of radiation hardening by process technology.
关键词
工艺加固/总剂量效应/单粒子效应/集成电路/功率器件Key words
radiation hardening by process/total ionizing dose effect/single event effect/integrated circuit/power device引用本文复制引用
基金项目
国家重点研发计划(2022YFB4401700)
国家自然科学基金(U22B2043)
国家自然科学基金(62374184)
出版年
2024
国家科技期刊平台
NSTL
万方数据